P1203BE UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) Continuous Drain Current Power Dissipation TA = 25 ° C TA = 70 ° C Avalanche Energy Avalanche Current UNITS 108 V A ID PD LIMITS VGS IDM 1.6 ± 20 EAS L = 0.1mH TJ, TSTG TC = 25 ° C TC = 100 ° C °C-55 to 150 mJ W Operating Junction & Storage Temperature Range Pulsed Drain Current1 SYMBOL VDS IAS TA = 25 ° C TA = 70 ° C TC = 25 ° C RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 12mΩ @VGS = 10V ID 30V REV 1.0 1 2016/12/18

N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.5 ± 100 nA 108 A 13 17.5 9 12 22 S 843 210 115 2.1 Ω 17.3 9.2 2.7 4.8 9.8 12.2 9.7 11.7 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Forward Transconductance1 Input Capacitance Junction-to-Ambient Total Gate Charge2 Qg(VGS=4.5V) 75 ° C / W VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V STATIC Qgs VDS = 10V, ID = 11A DYNAMIC V IGSS IDSS mA VDS = 24V, VGS = 0V mΩ VDS = 20V, VGS = 0V , TJ = 125 ° C VGS = 4.5V, ID = 11A nC VGS = 0V, VDS = 15V, f = 1MHz pF Ciss Coss Qg(VGS=10V) VDS = 0.5V(BR)DSS, ID = 11A Crss V(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage gfs ID(ON) Gate Threshold Voltage Drain-Source On-State Resistance1 On-State Drain Current1 RqJC VGS(th) Drain-Source Breakdown Voltage 3.6Junction-to-Case LIMITS VGS = 0V, ID = 250mA MAXIMUM UNITS RqJA Output Capacitance Gate-Drain Charge2 Gate-Source Charge2 TYPICAL SYMBOL TEST CONDITIONS THERMAL RESISTANCE SYMBOL Fall Time2 Reverse Transfer Capacitance Qgd VDS = 5V, VGS = 10V RDS(ON) VGS = 10V, ID = 11A PARAMETER nSVDD = 15V, ID @ 11A, VGEN = 10V, RG = 6Ω td(on) tr td(off) tf REV 1.0 2 2016/12/18

N-Channel Enhancement Mode MOSFET 2.3 A 1.3 V 18 nS 8 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS(TJ = 25 ° C) IF = 11A, VGS = 0V Reverse Recovery Charge Qrr Continuous Current IF = 11A, dlF/dt = 100A /ms IS Forward Voltage1 VSD Reverse Recovery Time trr REV 1.0 3 2016/12/18

N-Channel Enhancement Mode MOSFET REV 1.0 4 2016/12/18

N-Channel Enhancement Mode MOSFET REV 1.0 5 2016/12/18

N-Channel Enhancement Mode MOSFET REV 1.0 6 2016/12/18

N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：A8) B. Tape&Reel Information:5000pcs/Reel REV 1.0 7 2016/12/18

N-Channel Enhancement Mode MOSFET REV 1.0 8 2016/12/18

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 9 2016/12/18