P1160ZD UNIKC | Alldatasheet

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N-Channel High Voltage Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150° C. 3VDD = 50V , L = 40mH ,starting TJ = 25° C. Power Dissipation Tj, Tstg Junction-to-Ambient IDM ° C / W mJ Operating Junction & Storage Temperature Range 1.4 TC = 100 ° C 180 62.5 SYMBOL °C-55 to 150 W RqJA MAXIMUM ID TC = 25 ° C 600V Continuous Drain Current2 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 400mΩ @VGS = 10V 11A Gate-Source Voltage Drain-Source Voltage LIMITS A VGS VDS V UNITS SYMBOL ID 600 ± 30 THERMAL RESISTANCE TYPICAL PD Pulsed Drain Current1 Avalanche Current3 IAS Junction-to-Case RqJC EAS TC = 25 ° C Avalanche Energy3 REV 1.0 1 2017/2/13

N-Channel High Voltage Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 600 2 3.3 4 ± 100 nA 100 356 400 mΩ 8 S 872 647 5.4 11 A 1.5 V 278 nS 3.4 uC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. 4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. Co(er) VGS = 0V, VDS = 0 to 480V Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 5.5A VDS = 10V, ID = 5.5A VDS = 480V, VGS = 0V , TC = 100 ° C Gate-Body Leakage Gate Voltage Drain Current V(BR)DSS VGS = 0V, ID = 250mA IGSS Gate Threshold Voltage TEST CONDITIONS UNITSLIMITS VDS = VGS, ID = 250mA tr td(off) VDS = 0V, VGS = ± 30V VDS = 600V, VGS = 0V , TC = 25 ° C VDD = 480V, ID =5.5A, VGS = 10VQgs Rise Time2 Turn-Off Delay Time2 Fall Time2 VGS(th) Ciss IDSS Coss Crss Total Gate Charge2 gfsForward Transconductance1 Effective Output Capacitance4 Reverse Recovery Time IF = 5.5A, VGS = 0V IS VSD trr IF = 5.5A, dlF/dt = 100A / mSQrrReverse Recovery Charge Continuous Current3 STATIC Drain-Source Breakdown Voltage V PARAMETER SYMBOL mA DYNAMIC Input Capacitance Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Qgd Output Capacitance Qg VGS = 0V, VDS = 25V, f = 1MHz pF VDD = 300V ID = 5.5A, RG = 10Ω Forward Voltage1 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nC nS td(on) tf Turn-On Delay Time2 REV 1.0 2 2017/2/13

N-Channel High Voltage Mode MOSFET REV 1.0 3 2017/2/13

N-Channel High Voltage Mode MOSFET REV 1.0 4 2017/2/13

N-Channel High Voltage Mode MOSFET *因为各家封装厂模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/2/13

N-Channel High Voltage Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2017/2/13

N-Channel High Voltage Mode MOSFET REV 1.0 7 2017/2/13

N-Channel High Voltage Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/2/13