P1120EDB UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. L = 1mHAvalanche Energy MAXIMUM Junction-to-Case RqJC 1.8 SYMBOL LIMITS A VGS VDS V 69 W UNITS 6.7 84.5 mJ 200 ± 20 Drain-Source Voltage TC = 25 ° C ID TC = 25 ° C 200V Continuous Drain Current TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 280mΩ @VGS = 10V 11A Pulsed Drain Current1 Avalanche Current IAS 13 EAS THERMAL RESISTANCE TYPICAL PD Gate-Source Voltage ID IDM TC = 100 ° CPower Dissipation Tj, Tstg Junction-to-Ambient RqJA 62.5 ° C / W Junction & Storage Temperature Range SYMBOL °C-55 to 150 REV 1.0 1 2016/3/21

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 200 1 2 3 ± 100 nA 233 280 268 340 8.7 S 638 5.8 11 A 1 V 130 nS 520 uC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. mΩDrain-Source On-State Resistance1 RDS(ON) VGS =4.5V, ID = 5.5A IF = 11A, dl/dt = 100A / mS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS VGS = 0V, ID = 250mA IS VSD trr pF STATIC Drain-Source Breakdown Voltage V UNITS nCQgs mA DYNAMIC VDS = 200V, VGS = 0V QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IF = 11A, VGS = 0V nSVDS = 100V , ID @11A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS VDS = 160V, ID = 11A, VGS = 10V gfs Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Total Gate Charge2 Ciss VDS = 10V, ID = 5.5A Input Capacitance Qgd Output Capacitance Qg Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA VDS = 160V, VGS = 0V , TJ = 125 ° C PARAMETER SYMBOL VGS = 0V, VDS = 25V, f = 1MHz Gate-Body Leakage VGS(th) Forward Transconductance1 VGS = 10V, ID = 5.5A REV 1.0 2 2016/3/21

N-Channel Enhancement Mode MOSFET REV 1.0 3 2016/3/21

N-Channel Enhancement Mode MOSFET REV 1.0 4 2016/3/21

N-Channel Enhancement Mode MOSFET *因为各家封装厂模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2016/3/21

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2016/3/21

N-Channel Enhancement Mode MOSFET REV 1.0 7 2016/3/21

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2016/3/21