P1070ETF UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH, starting TJ = 25° C. 4This characteristics assumes the die are assembled in TO-220 packages. PD ° C / W W SYMBOL Junction-to-Case IDM VGS SYMBOL ± 30 -55 to 150 LIMITS EAS A mJ 700 V UNITS 125 THERMAL RESISTANCE TYPICAL Power Dissipation 46 MAXIMUM Avalanche Energy3 Junction-to-Ambient RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 0.91mΩ @VGS = 10V 10A ID 700V RqJC RqJA 2.7 62.5 TC = 25 ° C Tj, Tstg Drain-Source Voltage VDS Continuous Drain Current2,4 Operating Junction & Storage Temperature Range Pulsed Drain Current1,2 Avalanche Current3 TC = 25 ° C TC = 100 ° C IAS ID REV 1.0 1 2017/1/22

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 700 2 2.8 4 ± 100 nA 100 0.77 0.91 mΩ 13 S 2039 154 1.4 Ω 8.4 141 10 A 1.4 V 423 nS 5.8 uC 1Pulse test : Pulse Width  380 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. IGSS IDSS VVDS = VGS, ID = 250mA RDS(ON) VDS = 0V, VGS = ± 30V VGS = 0V, ID = 250mA TEST CONDITIONS IF = 10A , dIF/dt= 100A/ms Gate Threshold Voltage Drain-Source Breakdown Voltage VGS(th) VDS = 700V, VGS = 0V , TC = 25 ° C V(BR)DSS Ciss Gate Voltage Drain Current Gate-Body Leakage VDS = 560V, VGS = 0V , TC = 100 ° C STATIC SYMBOL gfs DYNAMIC VGS = 10V, ID = 5A mA VDS = 10V, ID = 5A Drain-Source On-State Resistance1 VDD = 560V, ID = 10A, VGS = 10V nC Coss Crss Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Qgd VGS = 0V, VDS = 0V, f = 1MHz pF Input Capacitance Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz Forward Transconductance1 Qg Qgs Total Gate Charge2 Gate Resistance Rg QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr Rise Time2 IF = 10A, VGS = 0V nSVDD = 350V, ID = 10A, RG= 25Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 Turn-Off Delay Time2 Fall Time2 LIMITS UNITSPARAMETER REV 1.0 2 2017/1/22

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/22

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/22

N-Channel Enhancement Mode MOSFET *因各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/1/22

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) REV 1.0 6 2017/1/22

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/22

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/22