P1070ATF UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V, L = 10mH, starting TJ = 25° C VGS Pulsed Drain Current1, 2 Junction-to-Ambient Operating Junction & Storage Temperature Range SYMBOL SYMBOL LIMITS ± 30 VDS 700 UNITS 6.8 V A ° C / W2.7 62.5 10A ID 700V Continuous Drain Current2 RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 0.85Ω @VGS = 10V RqJA Power Dissipation TJ, TSTG EAS ID MAXIMUMTHERMAL RESISTANCE TYPICAL mJ -55 to 150 W46 230 TC = 25 ° C TC = 100 ° C Junction-to-Case RqJC Drain-Source Voltage TC = 25 ° C Avalanche Current3 Avalanche Energy3 IDM PD IAS Rev1.1 1 2015/7/10

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 700 2.5 3 4.5 ± 100 nA 100 0.7 0.85 Ω 5 S 2080 189 1.6 Ω 10 A 1.4 V 484 nS 6.9 μC 1Pulse test : Pulse Width  380 msec, Duty Cycle  2％. 2Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. IF = 10A, dlF/dt = 100A / mS Gate Threshold Voltage VGS = 0V, VDS = 0V, f = 1MHz Rise Time2 DYNAMIC STATIC LIMITS UNITSPARAMETER IGSS VDrain-Source Breakdown Voltage VGS(th) RDS(ON) VDS = 560V, VGS = 0V , TC = 100 ° C VDS = 0V, VGS = ± 30V SYMBOL gfs mA VDS = 10V, ID = 5A VDD = 560V, VGS = 10V, ID = 10A Ciss Coss Crss Qgd Qgs VGS = 0V, VDS = 25V, f = 1MHz Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Gate Voltage Drain Current Gate-Body Leakage VDS = 700V, VGS = 0V, TC = 25 ° C Drain-Source On-State Resistance1 VDS = VGS, ID = 250mA VGS = 10V, ID = 5A IDSS Gate-Source Charge2 Reverse Transfer Capacitance nC pF Gate Resistance Rg Output Capacitance Gate-Drain Charge2 Total Gate Charge2 Qg QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 10A, VGS = 0V nSVDD = 350V, ID = 10A, RG = 25Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 Turn-Off Delay Time2 Fall Time2 Input Capacitance TEST CONDITIONS Rev1.1 2 2015/7/10

N-Channel Enhancement Mode MOSFET Rev1.1 3 2015/7/10

N-Channel Enhancement Mode MOSFET Rev1.1 4 2015/7/10

N-Channel Enhancement Mode MOSFET *因各家封装模具不同而外观略有所差异，不影响电性及Layout。 Rev1.1 5 2015/7/10

N-Channel Enhancement Mode MOSFET Rev1.1 6 2015/7/10

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) Rev1.1 7 2015/7/10

N-Channel Enhancement Mode MOSFET Rev1.1 8 2015/7/10

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) Rev1.1 9 2015/7/10