P106AAT

P106AAT UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. VGS Pulsed Drain Current1,2 Avalanche Current IAS Junction & Storage Temperature Range SYMBOL ID IDM SYMBOL LIMITS A ± 20 104 215 W UNITS 180 RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 10mΩ @VGS = 10V 74A ID TC = 25 ° C 65V Continuous Drain Current2 RqJC 1.2 MAXIMUM Junction-to-Case THERMAL RESISTANCE TYPICAL Avalanche Energy L = 0.1mH PD TC = 25 ° C TC = 100 ° C V Power Dissipation TJ, TSTG EAS Drain-Source Voltage VDS 65 °C-55 to 150 mJ Ver 1.0 1 2012/4/16

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 2.0 2.8 4.0 ± 100 nA 8.2 10 mΩ 43 S 5010 351 323 0.8 Ω 119 74 A 1.3 V 53 nS 143 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. IF = 42A, dlF/dt = 100A / μS Gate Threshold Voltage VGS = 0V, VDS = 25V, f = 1MHz pF VDS = 52V, VGS = 0V IGSS IDSS RDS(ON) VDS = 50V, VGS = 0V , TJ = 100 ° C VDS = 0V, VGS = ± 20V gfs mA DYNAMIC V Drain-Source On-State Resistance1 VDS = VGS, ID = 250mA Qg VDS = 0.5V(BR)DSS, VGS = 10V, ID = 42A Ciss Coss Crss Qgd Qgs Rg VGS = 0V, VDS = 0V, f = 1MHz nC Drain-Source Breakdown Voltage VGS = 10V, ID = 42A VDS = 10V, ID = 42A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage Rise Time2 Turn-Off Delay Time2 Fall Time2 Input Capacitance Output Capacitance Gate-Drain Charge2 Total Gate Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 42A, VGS = 0V nSVDS = 33V, ID @ 42A, VGS = 10V, RGEN = 6Ω td(on) tr td(off) tf Turn-On Delay Time2 STATIC LIMITS UNITPARAMETER SYMBOL TEST CONDITIONS Ver 1.0 2 2012/4/16

N-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/4/16

N-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/4/16

N-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/16