P1065ETF UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150° C. 3VDD = 50V, L = 10mH, starting TJ = 25° C Drain-Source Voltage VDS 650 V Avalanche Current3 IAS 5 A VGS Pulsed Drain Current1 Junction-to-Ambient ° C / W RqJC RqJA UNITS ID IDM SYMBOL LIMITS ± 30 °C-55 to 150 mJ 125 W RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 0.77Ω @VGS = 10V 10A ID TC = 25 ° C 650V Continuous Drain Current2 MAXIMUM Junction-to-Case THERMAL RESISTANCE TYPICAL 2.6 62.5 SYMBOL Power Dissipation TJ, TSTG EAS PD TC = 25 ° C TC = 100 ° C Operating Junction & Storage Temperature Range Avalanche Energy3 REV 1.0 1 2017/1/25

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 650 2 2.8 4 ± 100 nA 0.55 0.77 Ω 18 S 2017 167 8.5 136 10 A 1 V 451 nS 5.8 uC 1Pulse test : Pulse Width  380 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. Gate Threshold Voltage IF = 10A, dlF/dt = 100A / mS STATIC LIMITS UNITS V pF VDS = 650V, VGS = 0V, TC = 25 ° C IGSS IDSS RDS(ON) VDS = 520V, VGS = 0V , TC = 100 ° C VDS = 0V, VGS = ± 30V gfs mA DYNAMIC Drain-Source On-State Resistance1 VDS = VGS, ID = 250mA Qg VDD =520V, VGS = 10V, ID = 10A Ciss Coss Crss Qgd Qgs VGS = 0V, VDS = 25V, f = 1MHz nC Drain-Source Breakdown Voltage VGS = 10V, ID = 5A VDS = 10V, ID = 5A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Gate Voltage Drain Current Gate-Body Leakage Rise Time2 Turn-Off Delay Time2 Fall Time2 Input Capacitance Output Capacitance Gate-Drain Charge2 Total Gate Charge2 Gate-Source Charge2 Reverse Transfer Capacitance QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 10A, VGS = 0V nSVDD = 325V, ID = 10A, RG= 25Ω td(on) tr td(off) tf Turn-On Delay Time2 PARAMETER SYMBOL TEST CONDITIONS REV 1.0 2 2017/1/25

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/25

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/25

N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/25

N-Channel Enhancement Mode MOSFET REV 1.0 6 2017/1/25

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) REV 1.0 7 2017/1/25

N-Channel Enhancement Mode MOSFET REV 1.0 8 2017/1/25

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 9 2017/1/25