P1060ETF UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed 3VDD = 100V , L = 10mH, starting TJ = 25˚C Avalanche Energy3 MAXIMUM Junction-to-Case 3.5 LIMITS A VGS -55 to 150 UNITS RDS(ON) 0.77Ω @VGS = 10V 10A Drain-Source Voltage ± 30 39Power Dissipation Tj, Tstg PD ID TC= 25 ° C 600V Continuous Drain Current2 TC= 100 ° C PARAMETERS/TEST CONDITIONS Avalanche Current3 IAS IDM TC= 100° C Operating Junction & Storage Temperature Range TC= 25 ° C EAS THERMAL RESISTANCE TYPICAL SYMBOL Gate-Source Voltage ID 62.5 RqJC Junction-to-Ambient RqJA ° C / W3.2 mJ 15 W VDS 600 V SYMBOL Pulsed Drain Current1,2 REV 1.0 1 2015/9/25

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 600 2 2.9 4 ± 100 nA 0.57 0.77 Ω 15 S 1552 162 220 10 A 1.5 V 404 nS 4.7 uC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. Crss LIMITS VGS = 0V, ID = 250mA pF STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = 25V, f = 1MHz VDS = 0V, VGS = ± 30V IDSS Coss mA DYNAMIC V(BR)DSS VGS = 10V, ID = 5A gfs IS Gate-Body Leakage VDS = 600V, VGS = 0V , TC = 25 ° C QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Rise Time2 Turn-Off Delay Time2 Fall Time2 tr Reverse Recovery Time trr VSD nSVDD = 300V , ID = 10A, RG = 25Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ= 25 ° C) td(on) td(off) tf Turn-On Delay Time2 IF = 10A, VGS = 0V nCQgs TEST CONDITIONS Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Ciss VDS =15V, ID = 5A Input Capacitance Qgd VDD = 480V, ID = 10A, VGS = 10V Output Capacitance QgTotal Gate Charge2 Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA Forward Transconductance1 UNITSSYMBOL VGS(th) IF= 10A, dIF/dt=100A/ms PARAMETER Drain-Source On-State Resistance1 RDS(ON) VDS =480V, VGS = 0V, TC = 100° C REV 1.0 2 2015/9/25

N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/9/25

N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/9/25

N-Channel Enhancement Mode MOSFET *因各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2015/9/25

N-Channel Enhancement Mode MOSFET REV 1.0 6 2015/9/25

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) REV 1.0 7 2015/9/25

N-Channel Enhancement Mode MOSFET REV 1.0 8 2015/9/25

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 9 2015/9/25