P1060ATF

P1060ATF UNIKC | Alldatasheet

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P1060ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% UIS tested TO-220F(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH ,starting ,TJ = 25˚C. 4Not suggest using Self-Tapping screw. 62.5 °C-55 to 150 W MAXIMUM Junction-to-Ambient IDM SYMBOL LIMITS A VGS VDS 600 V UNITS 6.2 396 mJ ± 30 Power Dissipation Tj, Tstg TC= 25 ° C Drain-Source Voltage PD ID TC= 25 ° C 600V Continuous Drain Current2 TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 0.75Ω @VGS = 10V 10A SYMBOL Pulsed Drain Current1,2 Avalanche Current3 IAS 8.9 EAS THERMAL RESISTANCE TYPICAL Operating Junction & Storage Temperature Range Gate-Source Voltage ID Junction-to-Case RqJC TC= 100° C 3.1 ° C / WRqJA lbf.in N.m Avalanche Energy3 Mounting Torque4 Machine Screw 4.3 0.5 REV 1.0 1 2014-3-13

P1060ATF(S) N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 600 2.5 3 4.5 ± 100 nA 250 0.6 0.75 Ω 6.2 S 1789 170 10.2 17.7 210 10 A 1.5 V 518 nS 6.5 mC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. IF = 10A, dlF/dt = 100A / mS VDS = 0V, VGS = ± 30V IDSS Coss Crss LIMITS VGS = 0V, ID = 250mA IS VDS = 600V, VGS = 0V , TC = 25 ° C RDS(ON) pF STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = 25V, f = 1MHz mA DYNAMIC V(BR)DSS trr IF = 10A, VGS = 0V QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time nCQgs TEST CONDITIONS VSD nSVDD = 300V, ID = 10A, RG= 25Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 tr Drain-Source On-State Resistance1 Qg gfs Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Ciss VDS =10V, ID = 5A Input Capacitance Qgd VDD = 480V, ID = 10A, VGS = 10V Output Capacitance VGS =10V, ID =5A Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA UNITSSYMBOL Total Gate Charge2 Gate-Body Leakage VGS(th) Forward Transconductance1 VDS = 480V, VGS = 0V , TC = 100 ° C PARAMETER REV 1.0 2 2014-3-13

P1060ATF(S) N-Channel Enhancement Mode MOSFET REV 1.0 3 2014-3-13

P1060ATF(S) N-Channel Enhancement Mode MOSFET REV 1.0 4 2014-3-13

P1060ATF(S) N-Channel Enhancement Mode MOSFET REV 1.0 5 2014-3-13

P1060ATF(S) N-Channel Enhancement Mode MOSFET REV 1.0 6 2014-3-13