P1020HDB UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Drain-Source Voltage VDS 200 MAXIMUM ± 20 V IDMPulsed Drain Current1 VGS TYPICAL 6.3 6.5 ID PD TJ, TSTG SYMBOL LIMITS °C-55 to 150 mJ W UNITS A 21.1 SYMBOL Avalanche Current IAS Junction-to-Ambient Junction & Storage Temperature Range Power Dissipation EASAvalanche Energy L = 1mH RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 325mΩ @VGS = 10V 10A ID 200V Continuous Drain Current TC = 25 ° C TC = 25 ° C TC = 100 ° C RqJC RqJA THERMAL RESISTANCE ° C / WJunction-to-Case 2.4 62.5 REV 1.0 1 2017/6/9

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 200 1 2 3 ± 100 nA 364 440 261 325 6 S 372 12.7 1.7 5.5 10 A 1 V 103 nS 377 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. Drain-Source Breakdown Voltage Gate Threshold Voltage DYNAMIC V mA VGS = 0V, ID = 250mAV(BR)DSS Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 5A mΩ VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V VGS = 10V, ID = 5A VDS = 10V, ID = 5A VGS(th) IDSS Gate-Body Leakage IGSS pF Ciss CossOutput Capacitance VDS = 200V, VGS = 0V Crss VDS = 160V, VGS = 0V , TJ = 125 ° C Forward Transconductance1 gfs Diode Reverse Recovery Charge Continuous Current3 Turn-On Delay Time2 Zero Gate Voltage Drain Current nC Total Gate Charge2 IF = 10A, VGS = 0V trr Gate-Drain Charge2 IS td(off) tf VSD Qgd Input Capacitance SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Fall Time2 PARAMETER SYMBOL TEST CONDITIONS Gate-Source Charge2 Reverse Transfer Capacitance VGS = 0V, VDS = 25V, f = 1MHz Qg VDS = 160V ID =10A,VGS = 10V trRise Time2 Qgs STATIC LIMITS UNITS Forward Voltage1 Diode Reverse Recovery Time IF = 10A, dl/dt = 100A / mS nSVDS = 100V,ID @ 10A, VGS = 10V, RGEN = 6Ω td(on) Turn-Off Delay Time2 Qrr REV 1.0 2 2017/6/9

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/6/9

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/6/9

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/6/9

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2017/6/9

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/6/9

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/6/9