P1006BTF UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. VDS 60 V SYMBOL Pulsed Drain Current1 ° C / W2.6 mJ 19 W 62.5 RqJC Junction-to-Ambient RqJA Gate-Source Voltage ID SYMBOL Avalanche Current IAS IDM TC= 100° C Junction & Storage Temperature Range TC= 25 ° C EAS THERMAL RESISTANCE TYPICAL PD Avalanche Energy L = 0.1 mH 72.7 ID TC= 25 ° C 60V Continuous Drain Current TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 10mΩ @VGS = 10V 47A Drain-Source Voltage ± 20 48Power Dissipation Tj, Tstg LIMITS A VGS -55 to 150 UNITS 150 MAXIMUM Junction-to-Case REV 1.0 1 2015/8/3

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 8.2 13 7 10 60 S 1836 224 136 0.7 Ω 5.5 11.6 47 A 1.3 V 34 nS 36 uC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Drain-Source On-State Resistance1 RDS(ON) VGS =10V, ID = 20A mΩ VDS =40V, VGS = 0V, TJ = 125° C IF= 20A, dI/dt=100A/ms PARAMETER Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Forward Transconductance1 UNITSSYMBOL VGS(th) Qg(VGS=10V) Total Gate Charge2 Qg(VGS=4.5V) Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Ciss VDS =10V, ID = 20A Input Capacitance Qgd VDS = 30V , ID =20A Output Capacitance TEST CONDITIONS nCQgs VSD nSVDS = 30V , ID @ 20A, VGS = 10V, RGEN =6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ= 25 ° C) td(on) td(off) tf Turn-On Delay Time2 QrrDiode Reverse Recovery Charge Continuous Current Forward Voltage1 Rise Time2 Turn-Off Delay Time2 Fall Time2 tr Diode Reverse Recovery Time trr IF = 20A, VGS = 0V IS Gate-Body Leakage VDS =48V, VGS = 0V VDS = 0V, VGS = ± 20V IDSS Coss mA DYNAMIC V(BR)DSS VGS = 4.5V, ID = 20A gfs Crss LIMITS VGS = 0V, ID = 250mA pF STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = 25V, f = 1MHz REV 1.0 2 2015/8/3

N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/8/3

N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/8/3

N-Channel Enhancement Mode MOSFET *因各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2015/8/3

N-Channel Enhancement Mode MOSFET REV 1.0 6 2015/8/3

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) REV 1.0 7 2015/8/3

N-Channel Enhancement Mode MOSFET REV 1.0 8 2015/8/3

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 9 2015/8/3