P1006BT UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 30A. VDS 60 V SYMBOL Pulsed Drain Current1 ° C / W1.5 mJ 33 W 62.5 RqJC Junction-to-Ambient RqJA Gate-Source Voltage ID SYMBOL Avalanche Current IAS IDM TC= 100° C Junction & Storage Temperature Range TC= 25 ° C EAS THERMAL RESISTANCE TYPICAL PD Avalanche Energy L = 0.1 mH ID TC= 25 ° C 60V Continuous Drain Current2 TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 10mΩ @VGS = 10V 61A Drain-Source Voltage ± 20 83Power Dissipation Tj, Tstg LIMITS A VGS -55 to 150 UNITS 150 MAXIMUM Junction-to-Case REV 1.1 1 2014/10/30

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.7 2.3 ± 100 nA 8.2 13 6.8 10 60 S 1853 224 142 0.8 Ω 42.2 23.1 5.6 12.8 61 A 1.3 V 29 nS 27 uC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 30A. Drain-Source On-State Resistance1 RDS(ON) VGS =10V, ID = 20A mΩ IF= 20A, dI/dt=100A/μs PARAMETER Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Forward Transconductance1 UNITSSYMBOL VGS(th) Qg(VGS=10V) Total Gate Charge2 Qg(VGS=4.5V) Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Ciss VDS =10V, ID = 20A Input Capacitance Qgd VDS = 30V , ID =20A Output Capacitance VDS =40V, VGS = 0V, TJ = 125° C TEST CONDITIONS Gate-Body Leakage nCQgs VSD nSVDS = 30V , ID @ 20A, VGS = 10V, RGEN =6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ= 25 ° C) td(on) td(off) tf Turn-On Delay Time2 QrrDiode Reverse Recovery Charge Continuous Current3 Forward Voltage1 Rise Time2 Turn-Off Delay Time2 Fall Time2 tr Diode Reverse Recovery Time trr IF = 20A, VGS = 0V IS VDS =48V, VGS = 0V VDS = 0V, VGS = ± 20V IDSS Coss mA DYNAMIC V(BR)DSS VGS = 4.5V, ID = 20A gfs Crss LIMITS VGS = 0V, ID = 250mA pF STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = 25V, f = 1MHz REV 1.1 2 2014/10/30

N-Channel Enhancement Mode MOSFET REV 1.1 3 2014/10/30

N-Channel Enhancement Mode MOSFET REV 1.1 4 2014/10/30

N-Channel Enhancement Mode MOSFET REV 1.1 5 2014/10/30