P1006BK

P1006BK UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 35A. A V 3 ° C / W VGS Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 UNITS 120 TYPICAL VDS 60 V ID IDM SYMBOL LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 38 Junction-to-Case RqJC Junction-to-Ambient2 THERMAL RESISTANCE Avalanche Energy L =0.1mH ID Tc = 25 ° C 60V Continuous Drain Current3 Tc = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 10mΩ @VGS = 10V 43A Gate-Source Voltage ± 20 Pulsed Drain Current1 TC = 100 ° CPower Dissipation TJ, Tstg PD W mJ RqJA PD WTA = 70 ° C 1.4 TA= 70 ° C 8 Power Dissipation TA = 25 ° C 2.1 Continuous Drain Current TA = 25 ° C ID REV 1.0 1 2014-3-25

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.6 2.3 ± 100 nA 9.3 13 8.2 10 44 S 1865 215 144 0.8 Ω VGS =10V 45.3 VGS =4.5V 24.7 5.3 13.3 37 A 1.3 V 20 nS 10 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 35A. Drain-Source Breakdown Voltage V IF = 10A, dlF/dt = 100A / μS UNITS Coss Crss VGS = 4.5V, ID = 10A V(BR)DSS TEST CONDITIONS Ciss VDS = 5V, ID = 10A VDS = 0V, VGS = ± 20V gfs RDS(ON) Forward Transconductance1 STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 48V, VGS = 0V Qgd pF IDSS QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 10A, VGS = 0V nSVDS = 30V, ID @ 10A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) VDS = 30V,ID = 10A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance QgTotal Gate Charge2 Input Capacitance VGS = 0V, VDS = 25V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 10A VDS = 40V, VGS = 0V, TJ = 55 ° C SYMBOL LIMITS REV 1.0 2 2014-3-25

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014-3-25

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014-3-25

N-Channel Enhancement Mode MOSFET REV 1.0 5 2014-3-25