P1006BIS UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 30A L = 0.1mHAvalanche Energy °C-55 to 150 MAXIMUM Junction-to-Ambient IDM SYMBOL LIMITS A VVGS VDS V UNITS 150 74 mJ ± 20 96Power Dissipation Tj, Tstg TC= 25 ° C W ID TC= 25 ° C 60V Continuous Drain Current2 TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 10mΩ @VGS = 10V 66A Drain-Source Voltage Pulsed Drain Current1 Avalanche Current IAS 38.5 EAS THERMAL RESISTANCE TYPICAL PD Gate-Source Voltage ID TC= 100° C Junction & Storage Temperature Range SYMBOL Junction-to-Case RqJC 1.3 ° C / WRqJA 62.5 REV 1.0 1 2015/8/12

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 8.1 13 6.8 10 60 S 1920 215 140 0.7 Ω 66 A 1.3 V 26 nS 19 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 30A. Total Gate Charge2 Qg(VGS=4.5V) Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 20A mΩ IF = 20A, dl/dt = 100A / mS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS VGS = 0V, ID = 250mA IS STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = 25V, f = 1MHz mA Ciss VDS =10V, ID =20A Input Capacitance trr IF = 20A, VGS = 0V Fall Time2 tr Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance QrrDiode Reverse Recovery Charge Continuous Current3 Forward Voltage1 Diode Reverse Recovery Time V(BR)DSS tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 VSD nSVGS = 10V , VDS = 30V, ID @ 20A, RGEN= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) td(off) pF Gate Resistance gfs PARAMETER Qgd VDS = 30V, ID = 20A Output Capacitance Qg(VGS=10V) DYNAMIC nCQgs Rg VGS = 0V, VDS = 0V, f = 1MHz Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA Gate-Body Leakage VGS(th) Forward Transconductance1 VDS =40V, VGS = 0V, TJ = 125° C VGS = 10V, ID = 20A VDS = 48V, VGS = 0V UNITSSYMBOL TEST CONDITIONS REV 1.0 2 2015/8/12

N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/8/12

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:75pcs/Tube REV 1.0 6 2015/8/12

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2015/8/12