P1006BD UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2 Package limitation current is 30A. Power Dissipation Tj, Tstg Junction-to-Case RqJC L =0.1mH ID PD RqJA Pulsed Drain Current1 Avalanche Current IAS 38.5 EAS THERMAL RESISTANCE Avalanche Energy TYPICAL TC = 100 ° C ID TC = 25 ° C 60V Continuous Drain Current2 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 10mΩ @VGS = 10V 66A Gate-Source Voltage Drain-Source Voltage TC = 25 ° C V W UNITS 150 74 mJ ± 20 1.3 ° C / W IDM SYMBOL LIMITS A VVGS VDS Junction & Storage Temperature Range SYMBOL °C-55 to 150 MAXIMUM Junction-to-Ambient 62.5 REV 1.1 1 2015/8/20

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 8.1 13 6.8 10 60 S 1920 215 140 0.7 Ω 66 A 1.3 V 26 nS 19 uC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3 Package limitation current is 30A. Gate-Body Leakage VGS(th) VGS = 10V, ID = 20A Drain-Source On-State Resistance1 RDS(ON) mΩ VGS = 4.5V, ID = 20A SYMBOL UNITS Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA VDS = 40V, VGS = 0V, TJ = 125 ° C PARAMETER Ciss VDS =10V, ID = 20A Input Capacitance Qgd Output Capacitance Qg(VGS=10V) Forward Transconductance1 gfs td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS IS VSD trr IF = 20A, VGS = 0V nSVDS = 30V, ID @ 20A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr nCQgs mA DYNAMIC VDS = 48V, VGS = 0V QrrDiode Reverse Recovery Charge Continuous Current3 Forward Voltage1 Diode Reverse Recovery Time pF STATIC Drain-Source Breakdown Voltage V IF = 20A, dl/dt = 100A / mS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS VGS = 0V, ID = 250mA VGS = 0V, VDS = 25V, f = 1MHz Total Gate Charge2 Qg(VGS=4.5V Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz VDS = 30V , ID =20A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance REV 1.1 2 2015/8/20

N-Channel Enhancement Mode MOSFET REV 1.1 3 2015/8/20

N-Channel Enhancement Mode MOSFET REV 1.1 4 2015/8/20

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.1 5 2015/8/20

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.1 6 2015/8/20

N-Channel Enhancement Mode MOSFET REV 1.1 7 2015/8/20

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2015/8/20