P1004BD UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2VDD = 20V , Starting TJ = 25 °C. VGS Pulsed Drain Current1 Avalanche Current IAS Junction & Storage Temperature Range SYMBOL UNITS 120 ID IDM SYMBOL LIMITS A ± 20 °C-55 to 150 mJ W RDS(ON) TC = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 10mΩ @VGS = 10V 55A ID TC = 25 ° C 40V Continuous Drain Current MAXIMUM Junction-to-Case THERMAL RESISTANCE TYPICAL RqJC 2.5 PD TC = 25 ° C TC = 70 ° C Power Dissipation TJ, TSTG Junction-to-Ambient RqJA Drain-Source Voltage VDS 40 V Avalanche Energy2 L = 0.1mH EAS ° C / W62.5 REV 1.1 1 2015/3/30
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.7 2.0 3.0 ± 100 nA 120 A 13 17 8 10 25 S 1550 1750 280 310 185 200 1.5 2.5 Ω 26 32 6 8.5 8 10 12 33 35 65 12 23 38 A 0.7 1.3 V 75 nS 55 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. IF = 20A, dlF/dt = 100A / mS Gate Threshold Voltage VDS = VGS, ID = 250mA Qg pF VDS = 32V, VGS = 0V IGSS IDSS VDS = 30V, VGS = 0V , TJ = 55 ° C VDS = 0V, VGS = ± 20V gfs mA DYNAMIC VDS = 0.5V(BR)DSS, VGS = 10V, ID = 20A Ciss Coss Crss Qgd Qgs nC Drain-Source Breakdown Voltage VGS = 5V, ID = 8A VDS = 10V, ID = 20A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current V VSD trr Rise Time2 Turn-Off Delay Time2 Fall Time2 Input Capacitance Output Capacitance Gate-Drain Charge2 Total Gate Charge2 Gate-Source Charge2 IF = 15A, VGS = 0V nSVDS = 20V, RL = 1Ω ID @ 20A, VGS = 10V, RGEN = 6Ω QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 TEST CONDITIONS mΩ On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V STATIC LIMITS UNITSPARAMETER SYMBOL Gate Resistance Rg VGS = 15mV, VDS = 0V, f = 1MHz Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 15A VGS = 0V, VDS = 20V, f = 1MHz Gate-Body Leakage Reverse Transfer Capacitance REV 1.1 2 2015/3/30
N-Channel Enhancement Mode MOSFET REV 1.1 3 2015/3/30
N-Channel Enhancement Mode MOSFET REV 1.1 4 2015/3/30
N-Channel Enhancement Mode MOSFET REV 1.1 5 2015/3/30
N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.1 6 2015/3/30