P1003EVG UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. MAXIMUM Power Dissipation TA = 70 ° C THERMAL RESISTANCE SYMBOL PD TJ, TSTG TA = 25 ° C RqJAJunction-to-Ambient Operating Junction & Storage Temperature Range SYMBOL VDS LIMITS IAS Continuous Drain Current Pulsed Drain Current1 120 -49Avalanche Current EASAvalanche Energy L = 0.1mH RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 10.5mΩ @VGS = -10V -13A ID -30V VGS ° C / W A IDM -13TA = 25 ° C ID TYPICAL 1.6 2.5 -55 to 150 mJ W Junction-to-Case RqJC 25 UNITS -50 ± 25 V-30 Ver 1.0 1 2012/4/16

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -30 -1.0 -1.5 -3 ± 100 nA -10 -50 A 13 16 10.5 12 9 10.5 29 S 4200 1218 504 12.6 15.4 16.8 22.4 140 -2.1 A -1.2 V 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. tr td(off) mΩ QgTotal Gate Charge2 VDS = 0.5V(BR)DSS, VGS = -10V, ID = -13A nC Reverse Transfer Capacitance VGS = 0V, VDS = -15V, f = 1MHz DYNAMIC VSD TEST CONDITIONS Output Capacitance Gate-Drain Charge2 Gate-Source Charge2 Forward Voltage1 PARAMETER SYMBOL Fall Time2 Zero Gate Voltage Drain Current Gate-Body Leakage Qgd Qgs Coss tf Input Capacitance Ciss Crss IF = IS, VGS = 0V Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IS nSVDS = -15V, ID@ -1A, VGS = -10V, RGS = 6Ω td(on) Drain-Source Breakdown Voltage VGS = -4.5V, ID = -10A VDS = -10V, ID = -13A VGS(th) Forward Transconductance1 VGS = 0V, ID = -250mAV(BR)DSS gfs Gate Threshold Voltage VDS = -24V, VGS = 0V V IGSS pF mAIDSS VDS = -20V, VGS = 0V , TJ = 125 ° C VDS = VGS, ID = -250mA VDS = 0V, VGS = ± 25V STATIC LIMITS UNIT On-State Drain Current1 ID(ON) VDS = -5V, VGS = -10V VGS = -10V, ID = -13A RDS(ON) Drain-Source On-State Resistance1 VGS = -6.5V, ID = -13A Ver 1.0 2 2012/4/16

P-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/4/16

P-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/4/16

P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/16