P0860ETF UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150° C. 3VDD = 50V, L = 10mH, starting TJ = 25° C Power Dissipation Tj, Tstg EAS PD TC = 25 ° C TC = 100 ° C Operating Junction & Storage Temperature Range Avalanche Energy3 MAXIMUM Junction-to-Case THERMAL RESISTANCE TYPICAL 3.4 62.5 SYMBOL RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 1.05Ω @VGS = 10V 8A ID TC = 25 ° C 600V Continuous Drain Current2 °C-55 to 150 mJ 61.2 W UNITS ID IDM SYMBOL LIMITS ± 30 Junction-to-Ambient ° C / W RqJC RqJA Drain-Source Voltage VDS 600 V Avalanche Current3 IAS 3.5 A VGS Pulsed Drain Current1 REV 1.0 1 2017/1/23

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 600 2 2.7 4 ± 100 nA 0.83 1.05 Ω 10.5 S 1270 114 5.1 8.4 115 8 A 1 V 390 nS 3.9 uC 1Pulse test : Pulse Width  380 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. TEST CONDITIONSPARAMETER SYMBOL SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 8A, VGS = 0V nSVDD = 300V, ID = 8A, RG= 25Ω td(on) tr td(off) tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr Rise Time2 Turn-Off Delay Time2 Fall Time2 Input Capacitance Output Capacitance Gate-Drain Charge2 Total Gate Charge2 Gate-Source Charge2 Reverse Transfer Capacitance nC Drain-Source Breakdown Voltage VGS = 10V, ID = 4A VDS = 10V, ID =4A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Gate Voltage Drain Current Gate-Body Leakage Drain-Source On-State Resistance1 VDS = VGS, ID = 250mA Qg VDD =480V, VGS = 10V, ID = 8A Ciss Coss Crss Qgd Qgs VGS = 0V, VDS = 25V, f = 1MHz pF VDS = 600V, VGS = 0V, TC = 25 ° C IGSS IDSS RDS(ON) VDS = 480V, VGS = 0V , TC = 100 ° C VDS = 0V, VGS = ± 30V gfs mA DYNAMIC Gate Threshold Voltage IF = 8A, dlF/dt = 100A / mS STATIC LIMITS UNITS V REV 1.0 2 2017/1/23

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/23

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/23

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/1/23

N-Channel Enhancement Mode MOSFET REV 1.0 6 2017/1/23

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) REV 1.0 7 2017/1/23

N-Channel Enhancement Mode MOSFET REV 1.0 8 2017/1/23

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 9 2017/1/23