P0803BDG UNIKC | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 5
Technical content
N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. IAS Pulsed Drain Current1 Avalanche Current 2.5 TC= 25 ° C mJ ID TC= 25 ° C 30V Continuous Drain Current TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 9.2mΩ @VGS = 10V 60A Power Dissipation Tj, Tstg THERMAL RESISTANCE TC= 100° C Junction & Storage Temperature Range L=0.1mH EAS RqJC W Lead Temperature (1/16” from case for 10 sec.) TL 275 SYMBOL LIMITS 120 VDS IDM ID A -55 to 150 MAXIMUM UNITS Gate-Source Voltage VGS ± 20 V Avalanche Energy Junction-to-Ambient RqJA 62.5 ° C / W TYPICAL PD SYMBOL Junction-to-Case REV 1.0 1 2014/5/6
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1 1.8 3 ± 250 nA 8.8 9.2 15 19.4 26 S 120 A 910 300 155 4.3 Ω 102 38 A 1.3 V 28 nS 18 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. IF = IS, dlF/dt = 100A /mS UNITS Qrr VDS = 15V ,RL=0.75Ω ID≌20A, VGS = 10V, RGEN =2.5Ω TEST CONDITIONS VDS = VGS, ID = 250mA On-State Drain Current1 VGS = 10V IS nS mΩ VGS = 0V, ID = 250mA IF =IS, VGS = 0V DYNAMIC nC VDS =20V, VGS = 0V tr VSD pFVGS = 0V, VDS = 15V, f = 1MHz SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 ° C) tf VGS(th) mA VDS =15V, ID = 25A V Qg Qgs Qgd td(on) ID(ON) SYMBOL V(BR)DSS td(off) VDS = 10V, VGS = 10V Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source Breakdown Voltage PARAMETER Forward Transconductance1 Drain-Source On-State Resistance1 VGS =5V, ID =16A VGS = 0V, VDS = 0V, f = 1MHz Total Gate Charge2 VGS = 4.5V Input Capacitance VDS =15V, ID =30A Crss Rg VDS =20V, VGS = 0V, TJ = 125° C VGS =10V, ID =25A VDS = 0V, VGS = ± 20V LIMITS STATIC Reverse Recovery Charge Turn-Off Delay Time2 Rise Time2 Gate Resistance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time2 Gate-Drain Charge2 Gate-Source Charge2 Reverse Recovery Time IGSS IDSS RDS(ON) gfs Ciss Coss Forward Voltage1 Continuous Current Fall Time2 trr REV 1.0 2 2014/5/6
N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/5/6
N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/5/6
N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/5/6