P0706BI UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 55A. SYMBOL VGS mJ V 1.3 LIMITS UNITS 150 VDS 60 ID IAS IDM Junction-to-Ambient RqJA 62.5 TJ, TSTG TC = 100 ° C PD A Avalanche Energy L = 0.1mH RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage ID Continuous Drain Current2 TC = 25 ° C 60V Pulsed Drain Current1 7.5mΩ @VGS = 10V 80A Drain-Source Voltage 164 57Avalanche Current WPower Dissipation EAS 96TC = 25 ° C ± 20 TYPICAL °C-55 to 150Junction & Storage Temperature Range SYMBOL MAXIMUM RqJCJunction-to-Case THERMAL RESISTANCE ° C / W REV 1.0 1 2017/2/13

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 6.8 8.5 5.5 7.5 47 S 3805 424 357 0.7 Ω 108 146 102 80 A 1.2 V 41 nS 39 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 55A. Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A mΩ Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Total Gate Charge2 Qg(VGS=4.5V) Drain-Source Breakdown Voltage VGS = 0V, ID = 250mAV(BR)DSS TEST CONDITIONS IGSS IDSS Gate-Body Leakage VDS = 40V, VGS = 0V, TJ = 125 ° CZero Gate Voltage Drain Current VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V Gate Threshold Voltage VGS(th) nC VDS = 5V, ID = 20AForward Transconductance1 Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz pF Ciss Coss Input Capacitance DYNAMIC Crss Qg(VGS=10V) VDS = 30V , ID = 20A Gate-Source Charge2 Gate-Drain Charge2 Qgs Reverse Transfer Capacitance Qgd VGS = 10V, ID = 20A mA SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 20A, VGS = 0V gfs VDS = 48V, VGS = 0V V STATIC LIMITS UNITSPARAMETER SYMBOL trr Qrr IS VSD IF = 20A, dlF/dt = 100A / mS Reverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time nS Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 td(on) tr td(off) tf VDS = 30V ID @ 20A, VGS = 10V, RGEN =6Ω REV 1.0 2 2017/2/13

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/2/13

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/2/13

N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/2/13

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:75pcs/Tube REV 1.0 6 2017/2/13

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/2/13

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/2/13