P0706BD UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 55A. Avalanche Energy Junction-to-Ambient RqJA Power Dissipation Tj, TstgJunction & Storage Temperature Range W IDM ° C / W TC = 100 ° C 172L = 0.1mH 62.5 SYMBOL °C-55 to 150 mJ 1.3 MAXIMUM ID TC = 25 ° C 60V Continuous Drain Current2 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 7.5mΩ @VGS = 10V 80A Gate-Source Voltage Drain-Source Voltage LIMITS A VGS VDS V UNITS 150 SYMBOL ID ± 20 THERMAL RESISTANCE TYPICAL PD Pulsed Drain Current1 Avalanche Current IAS Junction-to-Case RqJC EAS TC = 25 ° C REV 1.0 1 2017/2/8
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 6.4 8.5 5.1 7.5 48 S 3844 423 355 0.6 Ω 106 136 80 A 1.2 V 41 nS 40 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 55A. Total Gate Charge2 Qg(VGS=4.5V) Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A mΩ pF Forward Transconductance1 VGS = 10V, ID = 20A VDS = 40V, VGS = 0V , TJ = 125 ° C Gate-Body Leakage Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage V(BR)DSS VGS = 0V, ID = 250mA TEST CONDITIONS VGS = 0V, VDS = 25V, f = 1MHz VDS = VGS, ID = 250mA UNITSLIMITS tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 VGS(th) Ciss Reverse Recovery Time IF = 20A, VGS = 0V IS VSD trr IF = 20A, dlF/dt = 100A / mSQrrReverse Recovery Charge Continuous Current3 STATIC Drain-Source Breakdown Voltage V PARAMETER SYMBOL mA DYNAMIC Input Capacitance Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Qgd Output Capacitance Qg(VGS=10V) VDS = 0V, VGS = ± 20V IDSS Coss Crss VDS = 48V, VGS = 0V VDS = 30V , ID = 20AQgs VDS = 5V, ID = 20Agfs Rg VGS = 0V, VDS = 0V, f = 1MHz VDS = 30V ID @ 20A, VGS = 10V, RGEN =6Ω Forward Voltage1 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nC nS td(on) REV 1.0 2 2017/2/8
N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/2/8
N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/2/8
N-Channel Enhancement Mode MOSFET *因为各家封装厂模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/2/8
N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2017/2/8
N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/2/8
N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/2/8