P062ABD8 UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. IAS Pulsed Drain Current1 Avalanche Current 3.5 RqJA Junction-to-Case Lead Temperature (1/16” from case for 10 sec.) ID Gate-Source Voltage EAS THERMAL RESISTANCE TC= 100° C Operating Junction & Storage Temperature Range SYMBOL ID TC= 25 ° C 25V Continuous Drain Current TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Junction-to-Ambient 6mΩ @VGS = 10V 60A TC= 25 ° C Avalanche Energy L=0.1mH Power Dissipation Tj, Tstg IDM TYPICAL PD RqJC ° C / W SYMBOL LIMITS 150 131 VGS ± 20 A -55 to 150 MAXIMUM mJ V W °CTL 275 UNITS REV 1.0 1 2014/4/29

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1 3 ± 100 nA 150 A 7.8 9.3 4 6 30 S 1740 504 338 1 Ω 37.2 6.8 8.5 111 31 A 1.16 V 50 nS 40 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. UNITSSYMBOL TEST CONDITIONS pF VDS = 0.5V(BR)DSS, VGS = 10V, ID = 30A Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage mA VGS =10V, ID =30A gfs Fall Time2 VDS = VGS, ID = 250mA trr VSD VDS = 15V , RL = 3Ω ID≌5A, VGS = 10V, RGEN =6Ω td(on) td(off) Gate-Source Charge2 Reverse Transfer Capacitance Turn-On Delay Time2 Rise Time2 V(BR)DSS Drain-Source On-State Resistance1 Ciss Gate-Body Leakage Input Capacitance QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 ° C) nS Total Gate Charge2 Rg PARAMETER Output Capacitance Qg VGS = 0V, VDS = 25V, f = 1MHz VGS(th) IF = IS, VGS = 0V IS Qgd Qgs DYNAMIC nC VDS =24V, VGS = 0V VGS = 0V, ID = 250mA VDS =15V, ID =24A mΩ V Turn-Off Delay Time2 tr Gate-Drain Charge2 Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS STATIC Forward Transconductance1 VDS =20V, VGS = 0V, TJ = 55° C VGS =4.5V, ID =30A On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V RDS(ON) REV 1.0 2 2014/4/29

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/4/29

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/4/29

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/4/29