P0610BTF UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. L = 1mHAvalanche Energy V Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 UNITS 200 TYPICAL ID IDM SYMBOL A LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 62.5PD Junction-to-Ambient RqJA 62.5 Junction-to-Case THERMAL RESISTANCE ID TC = 25 ° C 100V Continuous Drain Current TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 6.5mΩ @VGS = 10V 66A Drain-Source Voltage Gate-Source Voltage 832 ± 20 ° C / W Pulsed Drain Current1 TC = 100 ° CPower Dissipation TJ, Tstg VDS 100 W mJ RqJC VGS REV 1.1 1 2015/7/30

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2.3 ± 100 nA 6 8 5.4 6.5 133 S 6300 744 219 1.3 Ω 120 19.5 52 A 1.2 V 65 nS 176 uC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Qg(VGS=4.5V) Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 20A mΩ V(BR)DSS TEST CONDITIONS IF=20A,dlF/dt = 100A / mS UNITS Coss Crss Gate Resistance gfsForward Transconductance1 STATIC Drain-Source Breakdown Voltage V nCQgs mA DYNAMIC VDS = 80V, VGS = 0V Qgd pF IDSS QrrDiode Reverse Recovery Charge Continuous Current Forward Voltage1 Diode Reverse Recovery Time IS VSD trr IF = 20A, VGS = 0V nSVDS = 50V , ID @ 20A, VGS = 10V, RGEN =6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Ciss PARAMETER VDS = 80V, VGS = 0V, TJ = 125 ° C Rg VGS = 0V, VDS = 0V, f = 1MHz Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) LIMITS Input Capacitance VGS = 0V, VDS = 25V, f = 1MHzOutput Capacitance Qg(VGS=10V) VDS = 50V,ID = 20A Gate-Drain Charge2 Gate-Source Charge2 SYMBOL VGS = 10V , ID = 20A Reverse Transfer Capacitance VDS = 5V, ID = 20A Total Gate Charge2 VDS = 0V, VGS = ± 20V REV 1.1 2 2015/7/30

N-Channel Enhancement Mode MOSFET REV 1.1 3 2015/7/30

N-Channel Enhancement Mode MOSFET REV 1.1 4 2015/7/30

N-Channel Enhancement Mode MOSFET *因各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.1 5 2015/7/30

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) REV 1.1 6 2015/7/30

N-Channel Enhancement Mode MOSFET REV 1.1 7 2015/7/30

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2015/7/30