P0610BT UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 110A. 62.5 ° C / W Drain-Source Voltage VDS 100 V TC = 100 ° C Operating Junction & Storage Temperature Range SYMBOL Power Dissipation TJ, TSTG EASL = 1mH PD TC = 25 ° C RqJC 0.6 TYPICAL RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 6.5mΩ @VGS = 10V 120A ID TC = 25 ° C 100V Continuous Drain Current2 MAXIMUM Junction-to-Case THERMAL RESISTANCE mJ 208 770 W -55 to 150 Avalanche Energy UNITS 375 ID IDM SYMBOL 120 LIMITS A ± 20VGS Pulsed Drain Current1 Avalanche Current IAS 39 Junction-to-Ambient RqJA REV 1.0 1 2017/1/13

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2.3 ± 100 nA 5.8 8 5.3 6.5 140 S 6188 747 233 1.26 Ω 121 64.2 15.8 120 A 1.2 V 58 nS 136 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 110A. Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 20A Zero Gate Voltage Drain Current STATIC UNITSTEST CONDITIONS Gate-Drain Charge2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 VDS = 50V,ID = 20A Total Gate Charge2 Qg(VGS=4.5V) IF = 20A, VGS = 0V nSVDD = 50V, ID @ 20A, VGS = 10V, RGEN = 6Ω td(on) tr td(off) tf QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance nC Drain-Source Breakdown Voltage VGS = 10V, ID = 20A VDS = 10V, ID = 20A VGS(th) Forward Transconductance1 Qg(VGS=10V) Qgd VGS = 0V, VDS = 0V, f = 1MHz VVDS = VGS, ID = 250mA VGS = 0V, ID = 250mAV(BR)DSS Qgs mΩ Ciss Coss Crss LIMITS Rg Gate-Body Leakage IF = 20A, dls/dt = 100A / mS pF VDS = 80V, VGS = 0V IGSS IDSS VDS = 0V, VGS = ± 20V gfs DYNAMIC mA Output Capacitance VDS = 80V, VGS = 0V , TJ = 125 ° C SYMBOL Input Capacitance Gate Threshold Voltage PARAMETER VGS = 0V, VDS = 25V, f = 1MHz REV 1.0 2 2017/1/13

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/13

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/13

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube REV 1.0 6 2017/1/13

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/13

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/13