P0604BD UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Junction-to-Ambient RqJA TC = 25 ° C TC = 100 ° C Power Dissipation TJ, TSTG EAS Drain-Source Voltage VDS VGS TC = 25 ° C Pulsed Drain Current1 40V Continuous Drain Current Junction-to-Case THERMAL RESISTANCE TYPICAL RqJC Avalanche Energy L = 0.1mH PD RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 7mΩ @VGS = 10V 64A ID A ± 20 125 W 40 V mJ Avalanche Current IAS 50 UNITS 150 ID IDM SYMBOL LIMITS ° C / W Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 MAXIMUM 2.5 Ver 1.1 1 2013-3-14
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.7 2.2 3.0 ± 250 nA 150 A 7.8 13 6 7 40 S 2040 378 244 2.11 Ω 50 A 1.3 V 51 nS 60 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. VGS = 0V, VDS = 20V, f = 1MHz PARAMETER SYMBOL Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 20A Gate-Body Leakage Rise Time2 Turn-Off Delay Time2 Fall Time2 IF = 20A, VGS = 0V nSVDS = 20V, RL = 1Ω ID @ 20A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr Input Capacitance Output Capacitance Gate-Drain Charge2 Total Gate Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance nC Drain-Source Breakdown Voltage VGS = 4.5V, ID = 15A VDS = 10V, ID = 20A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current VVDS = VGS, ID = 250mA Qg VDS = 0.5V(BR)DSS, VGS = 10V, ID = 20A Ciss Coss Crss Qgd Qgs Rg VGS = 0V, VDS = 0V, f = 1MHz DYNAMIC mΩ On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V VDS = 32V, VGS = 0V IGSS IDSS VDS = 30V, VGS = 0V , TC = 125 ° C VDS = 0V, VGS = ± 20V gfs mA STATIC LIMITS UNITTEST CONDITIONS Gate Threshold Voltage IF = 20A, dlF/dt = 100A / μS pF Ver 1.1 2 2013-3-14
N-Channel Enhancement Mode MOSFET Ver 1.1 3 2013-3-14
N-Channel Enhancement Mode MOSFET Ver 1.1 4 2013-3-14
N-Channel Enhancement Mode MOSFET Ver 1.1 5 2013-3-14