P0603BDF UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2Package limitation current is 60A. Pulsed Drain Current1 Avalanche Current 2.08Junction-to-Case 140 mJEAS THERMAL RESISTANCE TC= 100° C Operating Junction & Storage Temperature Range SYMBOL ID TC= 25 ° C 30V Continuous Drain Current2 TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 5.8mΩ @VGS = 10V 78A Gate-Source Voltage TC= 25 ° C Power Dissipation Tj, Tstg RqJC IDM Avalanche Energy L=0.1mH TYPICAL PD SYMBOL LIMITS VGS IAS 61.2 ID ± 20 A -55 to 150 MAXIMUM V W UNITS REV 1.0 1 2014/5/4

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.2 1.7 3 ± 100 nA 140 A 5.3 7.8 4.2 5.8 44 S 1730 238 189 0.9 Ω 159 78 A 1.3 V 24 nS 12.3 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 60A. UNITSSYMBOL TEST CONDITIONS VDS = 15V, VGS = 10V, ID = 20A Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage mA VGS =10V, ID =20A VGS = 0V, ID = 250mA VGS = 0V, VDS = 0V, f = 1MHz pF trr VSD VDS = 15V , ID≌20A, VGS = 10V, RGEN =6Ω td(on) td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 20A, VGS = 0V nS Turn-On Delay Time2 Rise Time2 V(BR)DSS Drain-Source On-State Resistance1 Ciss Gate-Body Leakage Input Capacitance VDS = VGS, ID = 250mA gfs Fall Time2 VGS = 0V, VDS = 15V, f = 1MHz QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time Gate-Source Charge2 IS Qgd Qgs DYNAMIC nC Total Gate Charge2 Rg Output Capacitance Turn-Off Delay Time2 Coss mΩ VVGS(th) VDS =24V, VGS = 0V PARAMETER tr Gate-Drain Charge2 VDS =5V, ID =20A Qg IDSS Gate Resistance Reverse Transfer Capacitance Crss LIMITS STATIC IF = 20A, dlF/dt = 100A /ms Forward Transconductance1 VDS =20V, VGS = 0V, TJ = 125° C VGS =4.5V, ID =20A On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V RDS(ON) VDS = 0V, VGS = ± 20V REV 1.0 2 2014/5/4

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/5/4

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/5/4

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/5/4