P0550ETF UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150° C. 3VDD = 50V, L = 10mH, starting TJ = 25° C Drain-Source Voltage VDS 500 V Avalanche Current3 IAS 2.5 A VGS Pulsed Drain Current1 Junction-to-Ambient ° C / W RqJC RqJA UNITS 3.2 ID IDM SYMBOL LIMITS ± 30 °C-55 to 150 mJ 31.2 W RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 1.55Ω @VGS = 10V 5A ID TC = 25 ° C 500V Continuous Drain Current2 MAXIMUM Junction-to-Case THERMAL RESISTANCE TYPICAL 3.9 62.5 SYMBOL Power Dissipation TJ, TSTG EAS PD TC = 25 ° C TC = 100 ° C Operating Junction & Storage Temperature Range Avalanche Energy3 REV 1.0 1 2015/6/11

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 500 2 3 4 ± 100 nA 1.15 1.55 Ω 6.8 S 565 7.2 5 A 1 V 226 nS 1.7 uC 1Pulse test : Pulse Width  380 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. Gate Threshold Voltage IF = 5A, dlF/dt = 100A / mS STATIC LIMITS UNITS V pF VDS = 500V, VGS = 0V,TC = 25 ° C IGSS IDSS RDS(ON) VDS = 400V, VGS = 0V , TC = 100 ° C VDS = 0V, VGS = ± 30V gfs mA DYNAMIC Drain-Source On-State Resistance1 VDS = VGS, ID = 250mA Qg VDD =400V, VGS = 10V, ID = 5A Ciss Coss Crss Qgd Qgs VGS = 0V, VDS = 25V, f = 1MHz nC Drain-Source Breakdown Voltage VGS = 10V, ID = 2.5A VDS = 10V, ID = 2.5A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Gate Voltage Drain Current Gate-Body Leakage Rise Time2 Turn-Off Delay Time2 Fall Time2 Input Capacitance Output Capacitance Gate-Drain Charge2 Total Gate Charge2 Gate-Source Charge2 Reverse Transfer Capacitance QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 5A, VGS = 0V nSVDD = 300V, ID = 5A, RG= 25Ω td(on) tr td(off) tf Turn-On Delay Time2 PARAMETER SYMBOL TEST CONDITIONS REV 1.0 2 2015/6/11

N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/6/11

N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/6/11

N-Channel Enhancement Mode MOSFET REV 1.0 5 2015/6/11

N-Channel Enhancement Mode MOSFET REV 1.0 6 2015/6/11