P0550EI UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-251 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed 3VDD = 50V , L = 10mH, starting TJ = 25˚C ± 30 5TC = 25 ° C A VGS TYPICAL 62.5 3.2 2.5 MAXIMUM Avalanche Current3 Junction-to-Ambient LIMITS °C-55 to 150 mJ W UNITS 31.2 62.5 RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 1.55Ω @VGS = 10V 5A ID 500V Continuous Drain Current2 TJ, TSTG EAS SYMBOL ID IDMPulsed Drain Current1,2 IAS Power Dissipation ° C / W RqJC RqJA TC = 100 ° C Operating Junction & Storage Temperature Range SYMBOL PD Junction-to-Case Drain-Source Voltage VDS 500 V Avalanche Energy3 THERMAL RESISTANCE TC = 25 ° C REV 1.0 1 2015/7/14

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 500 2 3 4 ± 100 nA 1.26 1.55 Ω 6.5 S 565 5 A 1 V 277 nS 1.8 uC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. TEST CONDITIONS VDD = 400V, VGS = 10V, ID = 5A Drain-Source On-State Resistance1 Crss Qgd Qgs DYNAMIC VDS = 10V, ID = 2.5A nC VGS = 0V, VDS = 25V, f = 1MHz pF Qg Gate Threshold Voltage Drain-Source Breakdown Voltage PARAMETER SYMBOL VDS = VGS, ID = 250mA V IGSS IDSS mA VGS(th) gfs RDS(ON) VDS = 400V, VGS = 0V , TC = 100 ° C Ciss VDS = 0V, VGS = ± 30V Coss Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Gate Voltage Drain Current Gate-Body Leakage VDS = 500V, VGS = 0V , TC = 25 ° C VGS = 10V, ID = 2.5A Input Capacitance Output Capacitance Gate-Drain Charge2 Total Gate Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Reverse Recovery Charge Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 5A, VGS = 0V trr Continuous Current3 IS Forward Voltage1 Reverse Recovery Time VSD STATIC LIMITS UNITS IF = 5A, dlF/dt = 100A / mS nSVDD = 250V, ID = 5A,RG = 6Ω td(on) tr td(off) tf Qrr Fall Time2 REV 1.0 2 2015/7/14

N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/7/14

N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/7/14

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:75pcs/Tube REV 1.0 6 2015/7/14

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2015/7/14