P0550ED

P0550ED UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V, L = 10mH, starting TJ = 25° C. 2.5 A UNITS 3.2 ± 30 V500 LIMITS ID IDM Avalanche Current3 IAS mJ WPower Dissipation EAS 62.5 31.2 TC = 25 ° C TC = 100 ° C PD RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage ID Continuous Drain Current2 TC = 25 ° C TJ, TSTG VDS SYMBOL VGS 62.5 TYPICAL °C-55 to 150 RqJAJunction-to-Ambient Operating Junction & Storage Temperature Range SYMBOL MAXIMUM ° C / W RqJCJunction-to-Case THERMAL RESISTANCE 500V Pulsed Drain Current1 , 2 1.55Ω @VGS = 10V 5A Avalanche Energy3 REV 1.0 1 2015/4/29

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 500 2 3 4 ± 100 nA 1.26 1.55 Ω 6.5 S 565 5 A 1 V 277 nS 1.8 uC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. Drain-Source Breakdown Voltage VGS = 10V, ID = 2.5A VGS(th) VGS = 0V, ID = 250mAV(BR)DSS Gate Voltage Drain Current VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 30V Input Capacitance VDS = 500V, VGS = 0V , TC = 25 ° C Qg VDD = 400V, ID = 5A, VGS = 10VGate-Source Charge2 Gate-Drain Charge2 Qgd Qgs Drain-Source On-State Resistance1 IGSS IDSS RDS(ON) Gate-Body Leakage VDS = 400V, VGS = 0V , TC = 100 ° C V STATIC LIMITS UNITSPARAMETER SYMBOL TEST CONDITIONS Gate Threshold Voltage td(off) tf td(on) tr VDD = 250V, ID = 5A, RG = 6Ω DYNAMIC Total Gate Charge2 Crss gfs Reverse Transfer Capacitance nC mA VDS = 10V, ID = 2.5AForward Transconductance1 Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz pF Ciss Coss Reverse Recovery Charge Continuous Current3 Forward Voltage1 Turn-On Delay Time2 Rise Time2 Reverse Recovery Time Turn-Off Delay Time2 Fall Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 5A, VGS = 0V trr Qrr IS VSD IF = 5A, dlF/dt = 100A / ms nS REV 1.0 2 2015/4/29

N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/4/29

N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/4/29

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2015/4/29