P0550BD UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V, L = 10mH, starting TJ = 25° C. UNITS 4.5 ± 30 V A 500 LIMITS ID IDM mJ WPower Dissipation EAS TC = 25 ° C TC = 100 ° C PD RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage ID Continuous Drain Current2 TC = 25 ° C TJ, TSTG VDS SYMBOL VGS 2.4 62.5 TYPICAL °C-55 to 150 RqJAJunction-to-Ambient Operating Junction & Storage Temperature Range SYMBOL MAXIMUM ° C / W RqJCJunction-to-Case THERMAL RESISTANCE 500V Pulsed Drain Current1 , 2 1.75Ω @VGS = 10V 4.5A Avalanche Energy3 Ver 1.1 1 2013-3-14

N-Channel Enhancement Mode MOSFET MIN TYP MAX 500 2.5 4.5 ± 100 nA 250 1.75 Ω 4 S 691 12.1 3.7 3.6 4.5 A 1.5 V 1450 nS 10 uC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Limited only by maximum temperature allowed. Drain-Source Breakdown Voltage VGS = 10V, ID = 2.25A VGS(th) VGS = 0V, ID = 250mAV(BR)DSS Gate Voltage Drain Current VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 30V Input Capacitance VDS = 500V, VGS = 0V , TC = 25 ° C Qg VDD = 400V, ID = 4.5A, VGS = 10VGate-Source Charge2 Gate-Drain Charge2 Qgd Qgs Drain-Source On-State Resistance1 IGSS IDSS RDS(ON) Gate-Body Leakage VDS = 400V, VGS = 0V , TC = 100 ° C V STATIC LIMITS UNITPARAMETER SYMBOL TEST CONDITIONS Gate Threshold Voltage td(off) tf td(on) tr VDD = 250V, ID = 4.5A, RG = 25Ω DYNAMIC Total Gate Charge2 Crss gfs Reverse Transfer Capacitance nC mA VDS = 10V, ID = 2.25AForward Transconductance1 Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz pF Ciss Coss Reverse Recovery Charge Continuous Current3 Forward Voltage1 Turn-On Delay Time2 Rise Time2 Reverse Recovery Time Turn-Off Delay Time2 Fall Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 4.5A, VGS = 0V trr Qrr IS VSD IF = 4.5A, dlF/dt = 100A / ms nS Ver 1.1 2 2013-3-14

N-Channel Enhancement Mode MOSFET Ver 1.1 3 2013-3-14

N-Channel Enhancement Mode MOSFET Ver 1.1 4 2013-3-14

N-Channel Enhancement Mode MOSFET Ver 1.1 5 2013-3-14