P0510AT UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 111A. Junction-to-Ambient RqJA 143 LIMITS A ± 25VGS Pulsed Drain Current1 Avalanche Current IAS 36 Avalanche Energy UNITS 350 ID IDM SYMBOL mJ 227 648 W -55 to 150 MAXIMUM Junction-to-Case THERMAL RESISTANCE RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 5.5mΩ @VGS = 10V 143A ID TC = 25 ° C 100V Continuous Drain Current2 EASL = 1mH PD TC = 25 ° C RqJC 0.55 TYPICAL TC = 100 ° C Operating Junction & Storage Temperature Range SYMBOL Power Dissipation TJ, TSTG Drain-Source Voltage VDS 100 V 62.5 ° C / W REV 1.1 1 2018/5/16

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 2 3 4 ± 100 nA 4.4 7.5 4 5.5 50 S 6716 851 555 1 Ω 146 113 194 170 143 A 1.2 V 53 nS 98 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 111A. SYMBOL Input Capacitance Gate Threshold Voltage PARAMETER pF VDS = 80V, VGS = 0V IGSS IDSS VDS = 0V, VGS = ± 25V gfs DYNAMIC mA Output Capacitance VDS = 80V, VGS = 0V , TJ = 125 ° C IF = 20A, dls/dt = 100A / mS VGS = 0V, VDS = 25V, f = 1MHz Rg Gate-Body Leakage Ciss Coss Crss Qgd VGS = 0V, VDS = 0V, f = 1MHz VVDS = VGS, ID = 250mA VGS = 0V, ID = 250mAV(BR)DSS QgsGate-Source Charge2 Reverse Transfer Capacitance Gate Resistance nC Drain-Source Breakdown Voltage VGS = 10V, ID = 20A VDS = 10V, ID = 20A VGS(th) Forward Transconductance1 Qg(VGS=10V) QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 20A, VGS = 0V nSVDD = 50V, ID @ 20A, VGS = 10V, RGEN = 6Ω td(on) tr td(off) tf Gate-Drain Charge2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 VDS = 50V,ID = 20A UNITSTEST CONDITIONS mΩDrain-Source On-State Resistance1 RDS(ON) VGS = 7V, ID = 15A Zero Gate Voltage Drain Current Total Gate Charge2 Qg(VGS=7V) STATIC LIMITS REV 1.1 2 2018/5/16

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube REV 1.1 6 2018/5/16

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2018/5/16