P0502CEA

P0502CEA UNIKC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 5mΩ @VGS = 4.5V 70A Pulsed Drain Current1 173 TC = 25 ° C Operating Junction & Storage Temperature Range ID 20V SYMBOL VDS W Avalanche Current IAS mJ -55 to 150 EAS L = 0.1mH TJ, TSTG TC = 25 ° C TC = 100 ° C LIMITS VGS 1.4 IDM 2.3 UNITS 150 V A ID PD 17Continuous Drain Current1,2 Power Dissipation TA = 25 ° C TA = 70 ° C TA = 25 ° C TA = 70 ° C Avalanche Energy REV1.0 1 2014/6/16

N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 38A. 3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper , in a still air environment with TA=25° C.The value in any given application depends on the user's specific board design. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.4 0.6 0.7 ± 100 nA 150 A 4 5 5 5.7 6.7 8.2 45 S 3110 635 607 2 Ω 18.5 Input Capacitance nSVDS = 0.5V(BR)DSS, ID @ 5A, VGS = 4.5V, RGEN = 6Ω td(on) tr td(off) VDS = 5V, VGS = 5V VGS = 2.5V, ID = 5A tf Qgd Qgs TYPICAL PARAMETER SYMBOL TEST CONDITIONS THERMAL RESISTANCE SYMBOL LIMITS MAXIMUM UNITS RqJA RqJC VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage gfs ID(ON) Gate Threshold Voltage VGS = 4.5V, ID = 5A nC VGS = 0V, VDS = 10V, f = 1MHz pF Ciss Coss Qg VDS = 0.5V(BR)DSS, ID = 5A, VGS=4.5V Crss DYNAMIC V IGSS IDSS mA VDS = 16V, VGS = 0V On-State Drain Current1 Drain-Source Breakdown Voltage VDS = 10V, VGS = 0V , TJ = 55 ° C VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 8V STATIC 54 ° C / W3.1 Junction-to-Ambient3 Junction-to-Case Total Gate Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Gate-Drain Charge2 Gate-Source Charge2 Fall Time2 Drain-Source On-State Resistance1 RDS(ON) VGS = 1.8V, ID = 5A mΩ Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz VDS = 5V, ID =5A Output Capacitance Reverse Transfer Capacitance REV1.0 2 2014/6/16

N-Channel Enhancement Mode MOSFET 70 A 1.3 V 38 nS 27 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Reverse Recovery Time trr SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS IS = 5A, VGS = 0V IF = 5A, dlF/dt = 100A / mS Reverse Recovery Charge Qrr Continuous Current IS Forward Voltage1 VSD REV1.0 3 2014/6/16

N-Channel Enhancement Mode MOSFET REV1.0 4 2014/6/16

N-Channel Enhancement Mode MOSFET REV1.0 5 2014/6/16

N-Channel Enhancement Mode MOSFET REV1.0 6 2014/6/16