P0120HLB UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 200V 1.4Ω @VGS = 10V RDS(ON) ID 0.8A REV 1.0 1 2016/6/15 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS °C / W 1Pulse width limited by maximum junction temperature. VGS TYPICAL UNITS 3.5 0.8 ±20 Continuous Drain Current ID SYMBOL mJ -55 to 150 W TA = 25 °C TA = 70 °C 1.5 MAXIMUM LIMITS V A TA = 25 °C 2.4Power Dissipation Junction-to-Ambient Operating Junction & Storage Temperature Range PD TJ, TSTG THERMAL RESISTANCE EAS SYMBOL Avalanche Energy L = 1mH Avalanche Current PARAMETERS/TEST CONDITIONS Gate-Source Voltage TA = 70 °C 53RqJA 0.7 Pulsed Drain Current1 3.4 2.6IAS IDM REV 1.0 1 2016/6/15

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) MIN TYP MAX 200 1 2.2 3 ±100 nA 1.5 1.9 1.2 1.4 1.2 S 3.7 DYNAMIC VGS = 0V, VDS = 25V, f = 1MHz pFOutput Capacitance Coss Reverse Transfer Capacitance Crss Input Capacitance Ciss RDS(ON) VGS = 10V, ID = 0.5A VGS = 4.5V, ID = 0.5A Ω Forward Transconductance1 gfs VDS = 10V, ID = 0.5A Drain-Source On-State Resistance1 Zero Gate Voltage Drain Current IDSS VDS = 160V, VGS = 0V , TJ = 55 °C VDS = 200V, VGS = 0V V PARAMETER V(BR)DSS mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20VGate-Body Leakage Gate Threshold Voltage Drain-Source Breakdown Voltage VGS(th) IGSS VGS = 0V, ID = 250mA SYMBOL TEST CONDITIONS STATIC LIMITS UNITS Q REV 1.0 2 2016/6/15 3.7 1.7 1.2 1.4 0.8 A 1 V 68 nS 118 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. VDS = 160V, VGS = 10V, ID = 0.8A nC Gate-Source Charge2 Qgs Gate-Drain Charge2 Qgd Total Gate Charge2 Qg(VGS=4.5V Fall Time2 tf Qg(VGS=10V) VSD IF = 0.8A, VGS = 0V Turn-On Delay Time2 td(on) VDS = 100V, ID @ 0.8A VGS = 10V, RGS = 6Ω nSRise Time2 tr Turn-Off Delay Time2 td(off) SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS Reverse Recovery Time trr IF = 0.8A, dl/dt = 100A / mS Reverse Recovery Charge Qrr Forward Voltage1 REV 1.0 2 2016/6/15

N-Channel Enhancement Mode MOSFET REV 1.0 3 2016/6/15 REV 1.0 3 2016/6/15

N-Channel Enhancement Mode MOSFET REV 1.0 4 2016/6/15 REV 1.0 4 2016/6/15

N-Channel Enhancement Mode MOSFET REV 1.0 5 2016/6/15 REV 1.0 5 2016/6/15

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2016/6/15 REV 1.0 6 2016/6/15

N-Channel Enhancement Mode MOSFET REV 1.0 7 2016/6/15 REV 1.0 7 2016/6/15

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2016/6/15 REV 1.0 8 2016/6/15