LP0701 SUTEX | Alldatasheet

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Features

Freedom from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Package Options (Note 1) Note: See Package Outline section for dimensions. Low Threshold S G D TO-92 SO-8 top view NC D NC D SD GD

Package I D (continuous)* I D (pulsed)* Power Dissipation θjc θja IDR IDRM * @ T C = 25°C °C/W °C/W TO-92 -0.5A -1.25A 1W 125 170 -0.5A -1.25A *I D (continuous) is limited by max rated Tj. † Mounted on FR4 board, 25mm x 25mm x 1.57mm. Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BV DSS Drain-to-Source Breakdown Voltage -16.5 V V GS = 0V, ID = -1mA VGS(th) Gate Threshold Voltage -0.5 -0.7 -1.0 V V GS = VDS , ID = -1mA ΔV GS(th) Change in VGS(th) with Temperature -4.0 mV/ °CV GS = VDS , ID = -1mA IGSS Gate Body Leakage -100 nA V GS = ±10V, VDS = 0V IDSS Zero Gate Voltage Drain Current -100 nA V DS = -15V, VGS = 0V -1.0 mA V DS = 0.8 Max Rating, VGS = 0V, TA = 125°C -0.4 V GS = VDS = -2V ID(ON) ON-State Drain Current -0.6 -1.0 V GS = VDS = -3V -1.25 -2.3 A V GS = VDS = -5V 2.0 4.0 V GS = -2V, ID = -50mA R DS(ON) 1.7 2.0 V GS = -3V, ID = -150mA 1.3 1.5 V GS = -5V, ID = -300mA ΔR DS(ON) Change in RDS(ON) with temperature 0.75 %/ °CV GS = -5V, ID = -300mA G FS Forward Transconductance 500 700 m V DS = -15V, ID = -1A C ISS Input Capacitance 120 250 C OSS Common Source Output Capacitance 100 125 pF V GS = 0V, VDS = -15V, f = 1MHz C RSS Reverse Transfer Capacitance 40 60 td(ON) Turn-ON Delay Time 20 tr Rise Time 20 V DD =-15V, ID = -1.25A, td(OFF) Turn-OFF Delay Time 30 R GEN = 25Ω tf Fall Time 30 VSD Diode Forward Voltage Drop -1.2 -1.5 V V GS = 0V, ISD = -500mA Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Ω A Electrical Characteristics (@ 25°C unless otherwise specified) Static Drain-to-Source ON-State Resistance ns Ω Switching Waveforms and Test Circuit 90% 10% 90%90% 10% 10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD R gen -10V

Saturation Characteristics 0- 1- 2 - 3 - 5 -4 Maximum Rated Safe Operating Area -0.1 -100 -10-1.0 -0.1 -1.0 -10 -0.01 Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 Transconductance vs. Drain Current 1.0 0.8 0.6 0.4 0.2 0 -2.0-1.0 Power Dissipation vs. Case Temperature 0 150 10050 1257525 TA = -55°C TO-92 (DC) SO-8 (DC) TC = 25°C TO-92 TO-92/SO-8 (pulsed) VGS = -5V -4V -3V -2V -1V -2.5 -2.0 -1.5 -1.0 -0.5 Output Characteristics -2.5 -2.0 -1.5 -1.0 -0.5 0 -4 -8 -12 -16 VGS = -5V -4V -3V -2V -1V ID (amperes) ID (amperes) VDS (volts) V DS (volts) G FS (siemens) PD (watts) VDS = -15V TA = 25°C TA = 125°C TC (°C)ID (amperes) ID (amperes) VDS (volts) t P (seconds) TO-92 TC = 25°C PD = 1W SO-8 Typical Performance Curves

Gate Drive Dynamic Characteristics Q G (nanocoulombs) VGS(th) (normalized) R DS(ON) (normalized) V(th) and RDS Variation with Temperature On-Resistance vs. Drain CurrentBVDSS Variation with Temperature BVDSS (normalized) Transfer Characteristics Capacitance vs. Drain-to-Source Voltage 200 C (picofarads) 0 -5 -10 -15 100 0 - 1- 2- 3- 4- 5 -50 0 50 100 150 1.1 0 -3 1.4 1.2 1.0 0.8 0.6 0.4 1.6 1.4 1.2 1.0 0.8 0.6 -10 012345 -50 0 50 100 150 238pF TA = -55°C f = 1MHz -1 -2 -20V VDS = -15V 0.9 1.0 C ISS = 115pF V(th) @ -1mA R DS(ON) @ -5V, -300mA VGS = -3V VGS = -5V TA = 25°C TA = 125°C VGS = -2V ID (amperes)Tj (°C) R DS(ON) (ohms) ID (amperes) VGS (volts) T j (°C) VDS = -10V VDS (volts) VGS (volts) C ISS C OSS C RSS Typical Performance Curves