HV830

HV830_13 SUTEX | Alldatasheet

Document overview

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Technical content

Features

► Processed with HVCMOS® technology ► 2.0 to 9.5V operating supply voltage ► DC to AC conversion ► 200V peak-to-peak typical output voltage ► Large output load capability typically 50nF ► Permits the use of high-resistance elastomeric lamp components ► Adjustable output lamp frequency to control lamp color, lamp life, and power consumption ► Adjustable converter frequency to eliminate harmon- ics and optimize power consumption ► Enable/disable function ► Low current draw under no load condition ► Very low standby current - 30nA typical

Applications

► Handheld personal computers ► Electronic personal organizers ► GPS units ► Pagers ► Cellular phones ► Portable instrumentation General Description The Supertex HV830 is a high-voltage driver designed for driving EL lamps of up to 50nF. EL lamps greater than 50nF can be driven for applications not requiring high brightness. The input supply voltage range is from 2.0 to 9.5V. The device uses a single inductor and a minimum number of passive components. The nominal regulated output voltage that is applied to the EL lamp is ±100V. The chip can be enabled by connecting the resistors on the RSW-Osc and REL-Osc pins to the VDD pin, and disabled when connected to GND. The HV830 has two internal oscillators, a switching MOSFET and a high-voltage EL lamp driver. The frequency of the switching converter MOSFET is set by an external resistor connected between the RSW-Osc and the VDD pins. The EL lamp driver frequency is set by an external resistor connected between the REL-Osc and the VDD pins. An external induc- tor is connected between the LX and VDD pins. A 0.01µF to 0.1µF capacitor is connected between the CS pin and the GND. The EL lamp is connected between the VA and VB pins. The switching MOSFET charges the external inductor and discharges it into the CS capacitor. The voltage at CS will start to increase. Once the voltage at CS reaches a nominal value of 100V, the switching MOSFET is turned OFF to con- serve power. The output pins VA and VB are configured as an H-bridge and are switched in opposite states to achieve 200V peak-to-peak across the EL lamp. Block Diagram Disable GND VDD REL-Osc VA CS LX VB RSW-Osc Q Q Q Q Output Osc VREF Switch Osc C

Supertex inc. www.supertex.com Doc. # DSFP-HV830 E072913 HV830 Absolute Maximum Ratings Parameter Value Supply voltage, VDD -0.5 to +10V Output voltage, VCS -0.5 to +120V Power dissipation 400mW Storage temperature -65OC to +150OC Operating temperature -25OC to +85OC Recommended Operating Conditions Sym Parameter Min Typ Max Unit Conditions VDD Supply voltage 2.0 - 9.5 V --- fEL VA-B output drive frequency - - 1.5 KHz --- TA Operating temperature -25 - +85 OC --- Sym Parameter Min Typ Max Unit Conditions RDS(ON) On resistance of switching transistor - 2.0 4.0 Ω I = 100mA VCS Output voltage - regulation 90 100 110 V VDD = 2.0V to 9.5V VA - VB Output peak-to-peak voltage 180 200 220 V VDD = 2.0V to 9.5V IDDQ Quiescent VDD current - disabled - 30 - nA RSW-Osc = Low IDD VDD supply current - 100 150 µA VDD = 3.0V. See Fig.1 IIN Input current including inductor current - 35 40 mA VDD = 3.0V. See Fig.1 VCS Output voltage on VCS - 95 - V VDD = 3.0V. See Fig.1 fEL VA - VB output drive frequency 220 250 280 Hz VDD = 3.0V. See Fig.1 fSW Inductor switching frequency 55 65 75 KHz VDD = 3.0V. See Fig.1 D Switching transistor duty cycle - 88 - % --- Pin Configuration VDD RSW-Osc CS LX REL-Osc VA VB GND Product Marking Y = Last Digit of Year Sealed WW = Week Sealed L = Lot Number = “Green” Packaging YWW HV830 LLLL Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. 8-Lead SOIC 8-Lead SOIC (top view) Package may or may not include the following marks: Si or

Ordering Information

Part Number Package Packing HV830LG-G 8-Lead SOIC 2500/Reel Typical Thermal Resistance Package θja 8-Lead SOIC 101OC/W -G denotes a lead (Pb)-free / RoHS compliant package

Supertex inc. www.supertex.com Doc. # DSFP-HV830 E072913 HV830 Fig.1: Test Circuit, VIN = 3.0V V DD = V IN = 3.0V ON = V DD OFF = 0V 0.01µF 200V 0.1µF 2 220µH 1 BAS21L T1 1.0MΩ 3.3MΩ 3.0 square inch lamp. 1.0nF HV830 7 2

5 LX GND

The HV830 can be easily enabled and disabled via a logic control signal on the RSW and REL resistors as shown in Fig.2 below. The control signal can be from a microprocessor. RSW and REL are typically very high values, therefore, only 10’s of microamperes will be drawn from the logic signal when it is at a logic high (enable) state. When the microprocessor signal is high the device is enabled and when the signal is low, it is disabled. Enable/Disable Configuration Fig. 2: Enable/Disable Configuration VIN = VDD ON = VDD OFF = 0V CS 200V 4.7µF 15V 1.0nF LX BAS21LT1 RSW REL EL Lamp + Remote Enable HV830 7 2 Notes: 1. Murata part # LQH4N221K04 (DC resistance < 5.4Ω). 2. Larger values may be required depending upon supply impedance.

Supertex inc. www.supertex.com Doc. # DSFP-HV830 E072913 HV830 The HV830 can also be used for handheld devices operating from a single cell 1.5V battery where a regulated voltage is available. This is shown in Fig. 3. The regulated voltage can be used to run the internal logic of the HV830. The amount of current necessary to run the internal logic is typically 100µA at a V DD of 3.0V. Therefore, the regulated voltage could easily provide the current without being loaded down. The HV830 used in this configuration can also be enabled/disabled via logic control signal on the R SW and R EL resistors as shown in Fig.2. Split Supply Configuration Using a Single Cell (1.5V) Battery Fig. 3 can also be used with high battery voltages, such as 12V, as long as the input voltage, V DD, to the HV830 device is within its specifications of 2.0V to 9.5V. Split Supply Configuration for Battery Voltages of Higher than 9.5V Fig. 3 Split Supply Configuration VIN = Battery Voltage VDD = Regulated Voltage ON = VDD OFF = 0V CS 200V 0.1µF* LX BAS21LT1 RSW REL EL Lamp + Remote Enable 1.0nF HV830 7 2

• Larger values may be required depending upon supply impedance.

Supertex inc. www.supertex.com Doc. # DSFP-HV830 E072913 HV830 External Component Description External Component Description Diode Fast reverse recovery diode, BAS21LT1 or equivalent. CS Capacitor 0.01µF to 0.1µF, 200V capacitor to GND is used to store the energy transferred from the inductor. REL-Osc The EL lamp frequency is controlled via an external R EL resistor connected between REL-Osc and VDD pins of the device. The lamp frequency increases as REL decreases. As the EL lamp frequency increases, the amount of current drawn from the battery will increase and the output voltage V CS will decrease. The color of the EL lamp is dependent upon its frequency. A 3.3MΩ resistor would provide lamp frequency of 220 to 280Hz. Decreasing the R EL-Osc by a factor of 2 will increase the lamp frequency by a factor of 2. RSW-Osc The switching frequency of the converter is controlled via an external resistor, RSW between the RSW-Osc and VDD pins of the device. The switching frequency increases as RSW decreases. With a given inductor, as the switching frequency increases, the amount of current drawn from the battery will decrease and the output voltage, VCS, will also decrease. CSW Capacitor A 1nF capacitor is recommended between the RSW-Osc pin and GND when a 0.01µF C S capacitor is used. This capacitor is used to shunt any switching noise that may couple into the RSW-Osc pin. The CSW capacitor may also be needed when driving large EL lamp due to increase in switching noise. A CSW larger than 1.0nF is not recommended. LX Inductor The inductor LX is used to boost the low input voltage by inductive flyback. When the internal switch is on, the inductor is being charged. When the internal switch is off, the charge stored in the inductor will be transferred to the high voltage capacitor C S. The energy stored in the capacitor is connected to the internal H-bridge and therefore to the EL lamp. In general, smaller value inductors, which can handle more current, are more suitable to drive larger size lamps. As the inductor value decreases, the switching frequency of the inductor (controlled by R SW) should be increased to avoid saturation. 220µH Murata inductors with 5.4Ω series DC resistance is typically recommended. For inductors with the same inductance value but with lower series DC resistance, lower R SW value is needed to prevent high current draw and inductor saturation. Lamp As the EL lamp size increases, more current will be drawn from the battery to maintain high voltage across the EL lamp. The input power, (V IN x IIN), will also increase. If the input power is greater than the power dis- sipation of the package (400mW), an external resistor in series with one side of the lamp is recommended to help reduce the package power dissipation.

Doc. # DSFP-HV830 E072913 Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liabilit y to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888 www.supertex.com (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) 8-Lead SOIC (Narrow Body) Package Outline (LG) 4.90x3.90mm body, 1.75mm height (max), 1.27mm pitch Seating Plane Gauge Plane L L2EE1 D e b A A2 Seating Plane A A Top View Side View View B View B θ Note 1 (Index Area D/2 x E1/2) View A-A h h Note 1 Symbol A A1 A2 b D E E1 e h L L1 L2 θ θ1 Dimension (mm) 1.27 BSC 0.25 0.40 1.04 REF 0.25 BSC 0O 5O JEDEC Registration MS-012, Variation AA, Issue E, Sept. 2005. * This dimension is not specified in the JEDEC drawing. Drawings are not to scale. Supertex Doc. #: DSPD-8SOLGTG, Version I041309. Note: 1. This chamfer feature is optional. A Pin 1 identifier must be located in the index area indicated. The Pin 1 identifier can be: a molded mark/identifier; an embedded metal marker; or a printed indicator.