HV803 SUTEX | Alldatasheet
Document overview
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Technical content
Features
Processed with HVCMOS® technology 2.4V to 9.5V operating supply voltage DC to AC conversion 180V peak-to-peak typical output voltage Large output load capability typically 30nF Short circuit protection on outputs Adjustable output lamp frequency to control lamp color, lamp life, and power consumption Adjustable converter frequency to eliminate harmonics and optimize power consumption Enable/disable function Low current draw under no load condition Absolute Maximum Ratings* Supply Voltage, VDD -0.5V to +10V Output Voltage, VCs -0.5V to +120V Operating Temperature Range -25 °C to +85°C Storage Temperature Range -65 °C to +150°C Power Dissipation 400mW Note: *All voltages are referenced to GND. Package Options Device Input Voltage 8-Lead SO Die HV803 2.4V to 9.5V HV803LG HV803X
Ordering Information
The Supertex HV803 is a high-voltage driver designed for driving EL lamps of up to 30nF. EL lamps greater than 30nF can be driven for applications not requiring high brightness. The input supply voltage range is from 2.4 to 9.5V. The device uses a single inductor and a minimum number of passive components. The nominal regulated output voltage that is applied to the EL lamp is ±90V. The chip can be enabled by connecting the resistors on R SW-osc and REL-osc to VDD and disabled when connected to GND. The HV803 has two internal oscillators, a switching MOSFET, and a high-voltage EL lamp driver. The frequency for the switch- ing converter MOSFET is set by an external resistor connected between the R SW-osc pin and the supply pin V DD. The EL lamp driver frequency is set by an external resistor connected be- tween R EL-osc pin and the V DD pin. An external inductor is connected between the L x and V DD pins. A 0.01 µF to 0.1 µF capacitor is connected between CS and GND pins. The EL lamp is connected between VA and VB pins. The switching MOSFET charges the external inductor and discharges it into the Cs capacitor. The voltage at Cs will start to increase. Once the voltage at Cs reaches a nominal value of 90V, the switching MOSFET is turned OFF to conserve power. The outputs V A and V B are configured as an H-bridge and are switched in opposite states to achieve 180V peak-to-peak across the EL lamp. Pin Configuration ςΑ VDD REL-osc RSW-osc VA Cs VB Lx GND
Applications
Electronic personal organizers GPS units Handheld personal computers Portable instrumentation SO-8 – OBSOLETE –
Symbol Parameter Min Typ Max Units Conditions RDS(on) On-resistance of switching transistor 3.5 8.0 Ω I = 100mA VCS Output voltage VCS Regulation 80 90 100 V V IN = 2.4 to 9.5V VA - VB Output peak to peak voltage 160 180 200 V V IN = 2.4V to 9.5V IDDQ Quiescent VDD supply current, disabled 2.0 µAR SW-osc = GND IDD Input current going into the VDD pin 100 µAV IN = 3.0V ±5%. See Figure 1. 300 µAV IN = 5.0V ±5%. See Figure 2. 500 µAV IN = 9.0V ±5%. See Figure 3. IIN Input current including inductor current 35 mA V IN = 3.0V. See Figure 1. VCS Output voltage on VCS 45 70 V V IN = 3.0V. See Figure 1. fEL VA-B output drive frequency 300 430 Hz V IN = 3.0V. See Figure 1. fSW Switching transistor frequency 50 90 KHz V IN = 3.0V. See Figure 1. D Switching transistor duty cycle 88 %
Electrical Characteristics
DC Characteristics (VIN = 3.0V, RSW = 750KΩ, REL = 2.0MΩ, TA = 25°C unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions VDD Supply voltage 2.4 9.5 V TA Operating temperature -25 85 °C Recommended Operating Conditions RSW resistor HV803 VDD Enabled GND Disabled Enable/Disable Table (See Figure 4) HV803 – OBSOLETE –
Figure 1: Test Circuit, VIN = 3.0V (Low input current with moderate output brightness). Note: 1. Murata part # LQH4N561K04 (DC resistance < 14.5 Ω) 2. Larger values may be required depending upon supply impedance. VIN = 3.0V ON = VDD OFF = 0V 0.1µF 100V 0.1µF2 560µH1 1N4148 750KΩ 2MΩ 2.0KΩ 10nF Equivalent to 3 square inch lamp. HV803 Lx GND VB VA REL-oscVDD RSW-osc Cs Block Diagram Switch Osc C _ VrefDisable Output Osc GND VDD RSW-osc REL-osc Q Q Q VA Cs Lx VB Q For additional information, see application note AN-H33. HV803 – OBSOLETE –
Typical Performance Curves for Figure 1 using 3in2 EL Lamp. 100 214 5 3 214 5 3 214 5 3 6050 80 90 70 VCS (V) IIN (mA) Brightness (ft-Im) IIN (mA) VIN (V) VCS vs. VIN VIN (V) Brightness vs. VIN VIN (V) IIN vs. VIN VCS (V) IIN vs. VCS (V) 100 250 400 550 700 850 1000 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 Inductor Value (µH) I IN, VCS, Brightness vs. Inductor Value IIN (mA), VCS (V) IIN (mA) Brightness (ft-Im) VCS (V) Brightness (ft-Im) HV803 – OBSOLETE –
Figure 2: Typical 5.0V Application* VIN = 5.0V 0.1µF 100V 1nF 560µH1 1N4148 750KΩ 2MΩ 2.0KΩ 6 in2 lamp HV803 Lx GND VB VA REL-oscVDD RSW-osc Cs ON = VDD OFF = 0V 0.1µF2 Typical Performance Curves for Figure 2 547 8 6 7.5 6.5 5.5 547 8 6 547 8 6 70 80 85 9075 VCS (V) IIN (mA) Brightness (ft-Im) IIN (mA) VIN (V) VIN (V) VIN (V) VCS (V) VCS vs. VIN Brightness vs. VIN IIN vs. VIN IIN vs. VCS (V) Note: 1. Murata part # LQH4N561K04 (DC resistance < 14.5 Ω) 2. Larger values may be required depending upon supply impedance. For additional information, see application note AN-H33. HV803 – OBSOLETE –
Figure 3: Typical 9.0V Application* Typical Performance Curves for Figure 3 VIN = 9.0V 0.1µF 100V 1nF 560µH1 1N4148 330KΩ 2MΩ 5.1KΩ 10 in2 lamp HV803 Lx GND VB VA REL-oscVDD RSW-osc Cs 0.1µF2 100 7065 80 85 95 9075 VCS (V) IIN (mA) Brightness (ft-Im) IIN (mA) VIN (V) VIN (V) VIN (V) VCS (V) VCS vs. VIN Brightness vs. VIN IIN vs. VIN IIN vs. VCS (V) Note: 1. Murata part # LQH4N561K04 (DC resistance < 14.5 Ω) 2. Larger values may be required depending upon supply impedance. For additional information, see application note AN-H33. HV803 – OBSOLETE –
External Component Description External Component Selection Guide Line Diode Fast reverse recovery diode, 1N4148 or equivalent. Cs Capacitor 0.01 µF to 0.1µF, 100V capacitor to GND is used to store the energy transferred from the inductor. 0.01µF is recommended when driver has large EL lamps. REL-osc The EL lamp frequency is controlled via an external R EL resistor connected between R EL-osc and VDD of the device. The lamp frequency increases as REL decreases. As the EL lamp frequency increases, the amount of current drawn from the battery will increase and the output voltage VCS will decrease. The color of the EL lamp is dependent upon its frequency. A 2MΩ resistor would provide lamp frequency of 300 to 430Hz. Decreasing the R EL-osc by a factor of 2, the lamp frequency will increase by factor of 2. RSW-osc The switching frequency of the converter is controlled via an external resistor, RSW between RSW-osc and VDD of the device. The switching frequency increases as RSW decreases. With a given inductor, as the switching frequency increases, the amount of current drawn from the battery will decrease and the output voltage, VCS, will also decrease. CSW Capacitor A 1nF capacitor is required on R SW-osc pin to GND when the input voltage is equal to or greater than 5V. As the input voltage of the device increases, a faster switching converter frequency is required to avoid saturating the inductor. With the higher switching frequency, more noise will be introduced. This capacitor is used to shunt any switching noise that may couple into the R SW-osc pin. Lx Inductor The inductor L x is used to boost the low input voltage by inductive flyback. When the internal switch is on, the inductor is being charged. When the internal switch is off, the charge stored in the inductor will be transferred to the high voltage capacitor C S. The energy stored in the capacitor is then available to the internal H-bridge and therefore to the EL lamp. In general, smaller value inductors, which can handle more current, are more suitable to drive larger size lamps. As the inductor value decreases, the switching frequency of the inductor (controlled by R SW) should be increased to avoid saturation. 560µH Murata inductors with 14.5Ω series DC resistance is typically recommended. For inductors with the same inductance value but with lower series DC resistance, lower RSW value is needed to prevent high current draw and inductor saturation. Lamp As the EL lamp size increases, more current will be drawn from the battery to maintain high voltage across the EL lamp. The input power, (V IN x IIN), will also increase. If the input power is greater than the power dissipation of the package (350mW), an external resistor in series with one side of the lamp is recommended to help reduce the package power dissipation. Enable/Disable Configuration The HV803 can be easily enabled and disabled via a logic control signal on the RSW and REL resistors as shown in Figure 4 below. The control signal can be from a microprocessor. RSW and REL are typically very high values. Therefore, only 10’s of microam- VDD ON =VDD OFF = 0V CS 100V 0.1µF 1nF Lx 1N4148 RSW REL 5.1KΩ EL Lamp HV803LG Lx GND VB VA REL-oscVDD RSW-osc Cs Enable Figure 4: Enable/Disable Configuration peres will be drawn from the logic signal when it is at a logic high (enable) state. When the microprocessor signal is high the device is enabled and when the signal is low, it is disabled. HV803 – OBSOLETE –