HV57009 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Processed with HVCMOS ® technology ❏ 5V CMOS Logic ❏ Output voltage up to -85V ❏ Output current source control ❏ 16MHz equivalent data rate ❏ Latched data outputs ❏ Forward and reverse shifting options (DIR pin) ❏ Diode to VDD allows efficient power recovery ❏ Hi-Rel processing available Package Options Device 80-Lead Quad Ceramic Gullwing

80 Lead Quad

(MIL-Std-833 Processed*) HV57009 HV57009DG HV57009PG HV57009X RBHV57009DG * For Hi-Rel process flows, refer to page 5-3 of the Databook.

Ordering Information

Symbol Parameter Min Max Units Conditions IDD VDD supply current 15 mA V DD = VDD, max fCLK = 8MHz INN High voltage supply current -10 µA Outputs off, HVOUT = -85V (total of all outputs) IDDQ Quiescent VDD supply current 100 µA All inputs = VDD, except +IN = VSS = GND VOH High-level output Data out V DD -0.5 V I O = -100µA HVOUT +1 V DD VI O = -2mA VOL Low-level output Data out +0.5 V I O = 100µA IIH High-level logic input current 1 µAV IH = VDD IIL Low-level logic input current -1 µAV IL = 0V ICS HV output source current -2 mA V REF = 2V, REXT = 1K, see Figures 8a and 8b -0.1 mA V REF = 0.1V, REXT = 1K, see Figure 8a and 8b ∆ICS HV output source current for IREF = 2.0mA 10 % V REF = 2V, REXT = 1K

Electrical Characteristics

DC Characteristics (All voltages are referenced to VSS, VSS = 0, TA = 25°C) Symbol Parameter Min Max Units Conditions fCLK Clock frequency DC 8 MHz Per register tWL, tWH Clock width high or low 62 ns tSU Data set-up time before clock rises 10 ns tH Data hold time after clock rises 15 ns tON, tOFF Time for latch enable to HVOUT 500 ns C L = 15pF tDHL Delay time clock to data high to low 70 ns C L = 15pF tDLH Delay time clock to data low to high 70 ns C L = 15pF tDLE Delay time clock to LE low to high 25 ns tWLE Width of LE pulse 25 ns tSLE LE set-up time before clock rises 0 ns tr, tf Maximum allowable clock rise and fall time 100 ns (10% and 90% points) AC Characteristics (Logic signal inputs and Data inputs have tr, tf ≤ 5ns [10% and 90% points] for measurements) Notes 1: Current going out of the chip is considered negative. HV57009

Symbol Parameter Min Max Units VDD Logic supply voltage 4.5 5.5 V HVOUT HV output off voltage -85 V DD V VIH High-level input voltage V DD - 1.2V V DD V VIL Low-level input voltage 0 1.2 V fCLK Clock frequency per register DC 8 MHz TA Operating free-air temperature Plastic -40 +85 °C Ceramic -55 +125 °C Note: Power-up sequence should be the following: 1. Connect ground. 2. Apply V DD. 3. Set all inputs to a known state. Power-down sequence should be the reverse of the above. Recommended Operating Conditions Figure 1: Input and Output Equivalent Circuits

Previous IO = IREF Previous IO = 0 IO = 0 IO = IREF Data Valid50% 50%Data Input CLK Data Out 50% 50% 50% tSU tH tWL tWH 50% tDLH tDHL 50% tWLEtDLE tSLE 50% 50% tON 10% HVOUT w/ data input HIGH 90% 90%10% tOFF VDD VSS VDD VSS VDD VSS VDD VSS VDD VSS VDD HVOUT (off) VDD HVOUT (off) 10% 90% 90% 10% 50% tf tr Figure 2: Switching Waveforms

DIR = VDD; CW (HVOUT1→HVOUT64) DIR = VSS; CCW (HVOUT64→HVOUT1) →CW →CW Pin Function 1H V OUT 24 2H V OUT 23 3H V OUT 22 4H V OUT 21 5H V OUT 20 6H V OUT 19 7H V OUT 18 8H V OUT 17 9H V OUT 16

10 HV OUT 15

11 HV OUT 14

12 HV OUT 13

13 HV OUT 12

14 HV OUT 11

15 HV OUT 10

16 HV OUT 9

17 HV OUT 8

18 HV OUT 7

19 HV OUT 6

20 HV OUT 5

21 HV OUT 4

22 HV OUT 3

23 HV OUT 2

24 HV OUT 1

25 D I/O1A

26 D I/O2A

27 N/C

28 N/C

30 CLK

33 DIR

36 D I/O2B

37 D I/O1B

38 N/C

40 V BP

Figure 5: Pin Configurations 80-pin Gullwing Package Pin Function

41 HV OUT 64

42 HV OUT 63

43 HV OUT 62

44 HV OUT 61

45 HV OUT 60

46 HV OUT 59

47 HV OUT 58

48 HV OUT 57

49 HV OUT 56

50 HV OUT 55

51 HV OUT 54

52 HV OUT 53

53 HV OUT 52

54 HV OUT 51

55 HV OUT 50

56 HV OUT 49

57 HV OUT 48

58 HV OUT 47

59 HV OUT 46

60 HV OUT 45

61 HV OUT 44

62 HV OUT 43

63 HV OUT 42

64 HV OUT 41

65 HV OUT 40

66 HV OUT 39

67 HV OUT 38

68 HV OUT 37

69 HV OUT 36

70 HV OUT 35

71 HV OUT 34

72 HV OUT 33

73 HV OUT 32

74 HV OUT 31

75 HV OUT 30

76 HV OUT 29

77 HV OUT 28

78 HV OUT 27

79 HV OUT 26

80 HV OUT 25

Figure 6: Package Outline Figure 7: Shift Register Operation Notes: 1. Pin designation for DIR = V DD. 2. A 0.1 µF capacitor is needed between VDD and VBP (pin 40) for better output current stability and to prevent transient cross-coupling between outputs. See Fig. 8a and 8b. DIR = VDD:D I/O1A D I/O2A D I/O2B D I/O1B DIR = VSS:D I/O2A D I/O1A D I/O1B D I/O2B

+IN -IN RD* 10K CD* 390pF HV570 Logic To other outputs - + 0.1µF VBP VSS VREF IOUT HVOUT VDD0.1µF VBP IREF REXT +IN -IN RD* 10K CD* 390pF HV570 Logic To other outputs VSS Since IOUT = IREF = Therefore, if IOUT = 2mA and VREF = -5V → REXT = 2.5KΩ. If IOUT = 1mA and REXT = 1KΩ → VREF = -1V. If R EXT >10KΩ, add series network R D and C D to ground for stability as shown. This control method behaves linearly as long as the operational amplifier is not saturated. However, it requires a negative power source and needs to provide a current I REF = IOUT for each HV570 chip being controlled. If HVOUT ≥ +1V, the HVOUT cascode may no longer operate as a perfect current source, and the output current will diminish. This effect depends on the magnitude of the output current. Given IOUT and VREF, the REXT can be calculated by using: REXT = VREF = VREF IREF IOUT The intersection of a set of I OUT and VREF values can be located in the graph shown below. The value picked for REXT must always be in the shaded area for linear operation. This control method has the advantage that V REF is positive, and draws only leakage current. If REXT > 10K, add series network RD and CD to ground for stability as shown. Note: Lower reference current I REF, results in higher distortion, ∆ICS, on the output. *Required if REXT > 10K or REXT is replaced by a constant current source. Typical Current Programming Circuits Figure 8b: Positive Control Figure 8a: Negative Control VREF REXT 12345 IOUT (mA) VREF (V) 100 250 500 REXT = 1K

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