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Technical content

P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS R DS(on) max I D T A = 25°C -12V 31mΩ@ V GS = -4.5V 5.2A 45mΩ@ V GS =-2.5V 4.3A Description and Applications This new generation MOSFET has been designed to minimize the on- state resistance (R DS(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

  • DC-DC Converters
  • Power management functions
  • Analog Switch Features and Benefits
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) ESD Protected Up To 3kV "Green" Device, Halogen and Antimony Free (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SOT-23
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections: See Diagram
  • Terminals: Finish – Matte Ti n annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.0072 grams (approximate)

Ordering Information

(Note 3) Part Number Case Packaging DMP1045U-7 SOT-23 3,000/Tape & Reel Notes: 1. No purposefully added lead. Halogen and Antimony Free. Marking Information Date Code Key Year 2010 2011 2012 2013 2014 2015 Code X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D ESD PROTECTED TO 3kV Top View Internal Schematic Pin Configuration D G S SOT-23 Source Gate Drain Gate Protection Diode 15P = Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) 15P YM 1 of 2sales@zpsemi.com www.zpsemi.com

A = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage V DSS -12 V Gate-Source Voltage V GSS ±8 V Continuous Drain Current (Note 4) V GS = -4.5V Steady State T A = 25°C T A = 70°C I D 4.0 3.1 A Continuous Drain Current (Note 4) V GS = -2.5V Steady State T A = 25°C T A = 70°C I D 3.3 2.6 A Continuous Drain Current (Note 5) V GS = -4.5V Steady State T A = 25°C T A = 70°C I D 5.2 4.2 A Continuous Drain Current (Note 5) V GS = -2.5V Steady State T A = 25°C T A = 70°C I D 4.3 3.4 A Maximum Continuous Body Diode Forward Current (Note 5) I S 2 A Pulsed Drain Current (10us pulse, duty cycle=1%) (Note 4) I DM 40 A Thermal Characteristics A = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 4) P D 0.8 W Thermal Resistance, Junction to Ambient (Note 4) R θJA 168 °C/W Total Power Dissipation (Note 5) P D 1.3 W Thermal Resistance, Junction to Ambient (Note 5) R θJA 99 °C/W Thermal Resistance, Junction to Case (Note 5) R θJc 14.8 °C/W Operating and Storage Temperature Range T T STG -55 to +150 °C

Electrical Characteristics

A = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS -12 - - V V GS = 0V, I D = -250μA Zero Gate Voltage Drain Current T J = 25C I DSS - - -1.0 μA V DS = -12V, V GS = 0V Gate-Source Leakage I GSS - - ±10 μA V GS = ±8V, V DS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V GS(th) DS = V GS , I D = -250μA Static Drain-Source On-Resistance R DS (ON) 26 31 mΩ V GS = -4.5V, I D = -4.0A 31 45 V GS = -2.5V, I D = -3.5A 45 75 V GS = -1.8V, I D = -2.7A Forward Transfer Admittance |Y fs | - 12 - S V DS = -5V, I D = -4A Diode Forward Voltage V SD - -0.6 - V V GS = 0V, I S = -1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C iss - 1357 - pF V DS = -10V, V GS = 0V f = 1.0MHz Output Capacitance C oss - 504 - pF Reverse Transfer Capacitance C rss - 235 - pF Gate Resistnace R g - 14.1 - Ω V DS = 0V, V GS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS (Note 7) Total Gate Charge Q g - 15.8 - nC V GS = -4.5V, V DS = -10V, I D = -4A Gate-Source Charge Q gs - 2.0 - nC Gate-Drain Charge Q gd - 3.9 - nC Turn-On Delay Time t D(on) - 15.7 - ns V DS = -10V, V GS = -4.5V, R L = 2.5Ω, R G = 3.0Ω Turn-On Rise Time t r - 23.3 - ns Turn-Off Delay Time t D(off) - 91.2 - ns Turn-Off Fall Time t f - 106.9 - ns Notes: 2. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 3. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET 2 of 2sales@zpsemi.com www.zpsemi.com