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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

  • Extremely Low On-Resistance: 170m Ω @ V GS = 4.5V
  • High Drain Current: 1.1A
  • Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits
  • ESD Protected Gate
  • Lead Free By Design/RoHS Compliant (Note 1)
  • "Green" Device (Note 2)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SC59
  • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish - Matte Ti n annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Terminal Connections: See Diagram
  • Weight: 0.014 grams (approximate)

Ordering Information

(Note 3) Part Number Case Packaging DMN100-7-F SC59 3000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. Marking Information Date Code Key Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 Code T U V W X Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SC59 Top View Equivalent Circuit To p View ESD PROTECTED D SG Source Gate Protection Diode Gate Drain M11 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) M11 YM N-CHANNEL ENHANCEMENT MODE MOSFET 1 of 2sales@zpsemi.com www.zpsemi.com

A = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage V DSS 30 V Gate-Source Voltage Continuous V GSS ±20 V Drain Current Continuous Pulsed I D 1.1 4.0 A Thermal Characteristics A = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation P D 500 mW Thermal Resistance, Junction to Ambient R θJA 250 K/W Operating and Storage Temperature Range T J , T STG -55 to +150

Electrical Characteristics

A = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage BV DSS 30 — — V V GS = 0V, I D = 250μA Zero Gate Voltage Drain Current @ T J = 25°C @ T J = 125°C I DSS — 1.0 10 μA V DS = 24V, V GS = 0V Gate-Body Leakage I GSS — ± 100 nA V GS = ± 12V, V DS = 0V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V GS th 1.0 — 3.0 V V DS = 10V, I D = 1.0mA Static Drain-Source On-Resistance R DS (ON) — — 0.170 0.150 Ω V GS = 4.5V, I D = 0.5A V GS = 10V, I D = 1.0A Forward Transconductance g FS 1.3 2.4 ⎯ S V DS = 10V, I D = 0.5A DYNAMIC CHARACTERISTICS Input Capacitance C iss — 150 — pF V DS = 10V, V GS = 0V f = 1.0MHz Output Capacitance C oss — 90 — pF Reverse Transfer Capacitance C rss — 30 — pF Total Gate Charge Q g — 5.5 — nC V DS = 24V, I D = 1.0A, V GS = 10V Gate-to-Source Charge Q g s — 0.8 — nC Gate-to-Drain Charge Q g d — 1.3 — nC SWITCHING CHARACTERISTICS Turn-On Delay Time t D ON — 10 — ns V DD = 10V, I D = 0.5A, V GS = 5.0V, R GEN = 50Ω Turn-Off Delay Time t D OFF — 25 — ns Turn-On Rise Time t r — 15 — ns Turn-Off Fall Time t f — 45 — ns SOURCE-DRAIN RATINGS (BODY DIODE) Continuous Source Current I S — — 0.54 A — Pulse Source Current I SM — — 4.0 A — Forward Voltage V SD — — 1.2 V I F = 1.0A, V GS = 0V Reverse Recovery Time t r r — 35 — ns I F = 1.0A, di/dt = 50A/μs Notes: 2. Pulse width ≤ 300μs, duty cycle ≤ 2%. DMN100 N-CHANNEL ENHANCEMENT MODE MOSFET 2 of 2sales@zpsemi.com www.zpsemi.com