DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

  • Low On-Resistance
  • 25m Ω @ V GS = 4.5V
  • 29m Ω @ V GS = 2.5V
  • 36m Ω @ V GS = 1.8V
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage ESD Protected Up To 2kV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SOT23
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Terminals Connections: See Diagram Below
  • Weight: 0.008 grams (approximate)

Ordering Information

(Note 3) Part Number Qualification Case Packaging DMG6968U-7 Commercial SOT23 3000/Tape & Reel DMG6968UQ-7 Automotive SOT23 3000/Tape & Reel Notes: 1. No purposefully added lead. Marking Information Date Code Key Year 2009 2010 2011 2012 2013 2014 2015 Code W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View Internal Schematic To p View D G S ESD PROTECTED TO 2kV Source Gate Protection Diode Gate Drain 2N4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2N4 YM N-CHANNEL ENHANCEMENT MODE MOSFET 1 of 2sales@zpsemi.com www.zpsemi.com

A = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±12 V Continuous Drain Current (Note 4) Steady State T A = 25°C T A = 70°C I D 6.5 5.2 A Pulsed Drain Current I DM 30 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) P D 1.3 W Thermal Resistance, Junction to Ambient @T A = 25°C R θJA 157 °C/W Operating and Storage Temperature Range T T STG -55 to +150 °C

Electrical Characteristics

A = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV DSS 20 ⎯ ⎯ V V GS = 0V, I D = 250μA Zero Gate Voltage Drain Current T J = 25°C I DSS ⎯ ⎯ 1.0 μA V DS = 20V, V GS = 0V Gate-Source Leakage I GSS ⎯ ⎯ ±10 μA V GS = ±10V, V DS = 0V Gate-Source Breakdown Voltage BV SGS ±12 - - V V DS = 0V, I G = ±250μA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V GS th 0.5 ⎯ 0.9 V V DS = V GS , I D = 250μA Static Drain-Source On-Resistance R DS (ON) 21 25 mΩ V GS = 4.5V, I D = 6.5A 23 29 V GS = 2.5V, I D = 5.5A 28 36 V GS = 1.8V, I D = 3.5A Forward Transfer Admittance |Y fs | ⎯ 8 ⎯ S V DS = 10V, I D = 5A DYNAMIC CHARACTERISTICS Input Capacitance C iss ⎯ 151 ⎯ pF V DS = 10V, V GS = 0V f = 1.0MHz Output Capacitance C oss ⎯ 91 ⎯ pF Reverse Transfer Capacitance C rss ⎯ 32 ⎯ pF Total Gate Charge Q g ⎯ 8.5 ⎯ nC V GS = 4.5V, V DS = 10V, I D = 6.5A Gate-Source Charge Q g s ⎯ 1.6 ⎯ nC Gate-Drain Charge Q g d ⎯ 2.8 ⎯ nC Turn-On Delay Time t D on ⎯ 54 ⎯ ns V DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A Turn-On Rise Time t r ⎯ 66 ⎯ ns Turn-Off Delay Time t D off ⎯ 613 ⎯ ns Turn-Off Fall Time t f ⎯ 205 ⎯ ns Notes: 2. Device mounted on FR-4 substrate PC board, 2oz. copper , with thermal vias to bottom layer 1 inch square copper plate. 3. Short duration pulse test used to minimize self-heating effect. DMG6968U N-CHANNEL ENHANCEMENT MODE MOSFET 2 of 2sales@zpsemi.com www.zpsemi.com