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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SOT23
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Terminals Connections: See Diagram Below
  • Weight: 0.008 grams (approximate)

Ordering Information

(Note 4) Part Number Qualification Case Packaging DMG3420U-7 Commercial SOT23 3000/Tape & Reel DMG3420UQ-7 Automotive SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Date Code Key Year 2009 2010 2011 2012 2013 2014 2015 Code W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D TOP VIEW Equivalent Circuit TOP VIEW D G S Source Gate Drain G31 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) G31 YM SOT23 N-CHANNEL ENHANCEMENT MODE MOSFET 1 of 2sales@zpsemi.com www.zpsemi.com

(@T A = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±12 V Continuous Drain Current (Note 5) Steady State T A = 25°C T A = 85°C I D 5.47 3.43 A Pulsed Drain Current (Note 6) I DM 20 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P D 0.74 W Thermal Resistance, Junction to Ambient @T A = 25°C (Note 5) R θJA 167 °C/W Operating and Storage Temperature Range T T STG -55 to +150 °C

Electrical Characteristics

(@T A = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV DSS 20 — — V V GS = 0V, I D = 250μA Zero Gate Voltage Drain Current T J = +25°C I DSS — — 1.0 µA V DS = 20V, V GS = 0V Gate-Source Leakage I GSS — — ±100 nA V GS = ±12V, V DS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V GS th 0.5 0.95 1.2 V V DS = V GS , I D = 250μA Static Drain-Source On-Resistance R DS(ON) 21 29 mΩ V GS = 10V, I D = 6A 25 35 V GS = 4.5V, I D = 5A 34 48 V GS = 2.5V, I D = 4A 65 91 V GS = 1.8V, I D = 2A Forward Transfer Admittance |Y fs | — 9 — S V DS = 5V, I D = 3.8A Diode Forward Voltage V SD — 0.75 1.0 V V GS = 0V, I S = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C iss — 434.7 — pF V DS = 10V, V GS = 0V, f = 1.0MHz Output Capacitance C oss — 69.1 — pF Reverse Transfer Capacitance C rss — 61.2 — pF Gate Resistance R g — 1.53 — Ω V DS = 0V, V GS = 0V, f = 1MHz Total Gate Charge Q g — 5.4 — nC V GS = 4.5V, V DS = 10V, I D = 6A Gate-Source Charge Q g s — 0.9 — nC Gate-Drain Charge Q g d — 1.5 — nC Turn-On Delay Time t D on — 6.5 — ns V DD = 10V, V GS = 5V, R L = 1.7Ω, R G = 6Ω Turn-On Rise Time t r — 8.3 — ns Turn-Off Delay Time t D off — 21.6 — ns Turn-Off Fall Time t f — 5.3 — ns Notes: 3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. DMG3420U N-CHANNEL ENHANCEMENT MODE MOSFET 2 of 2sales@zpsemi.com www.zpsemi.com