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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up To 3kV
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SOT23
  • Case Material: Molded Plastic, “Green” Molding Compound.
  • UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish ۛMatte Tin annealed over Copper leadframe.
  • Solderable per MIL-STD-202, Method 208
  • Terminals Connections: See Diagram Below
  • Weight: 0.008 grams (approximate)

Ordering Information

(Note 4) Part Number Qualification Case Packaging DMG3415U-7 Commercial SOT23 3,000/Tape & Reel DMG3415UQ-7 Automotive SOT23 3,000/Tape & Reel DMG3415U-13 Commercial SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Top View Internal Schematic Top View Equivalent Circuit D G S Source Gate Protection Diode Gate Drain ESD PROTECTED TO 3kV 34P = Product Type Marking Code YW = Date Code Marking Y = Year (ex: W = 2009) W = Week (ex: A ~ Z = Weeks 1 ~ 26 a ~ y = Weeks 27 ~ 51 z = Weeks 52 and 53 DMG3415U-7 SOT23 34P YW 1 of 2sales@zpsemi.com www.zpsemi.com

(@T A = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V DSS -20 V Gate-Source Voltage V GSS ±8 V Continuous Drain Current (Note 5) V GS = -4.5V Steady State T A = +25°C T A = +70°C I D -4.0 -3.5 A Pulsed Drain Current (10μs pulse, duty cycle = 1%) I DM -30 A Thermal Characteristics (@T A = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) P D 0.9 W Thermal Resistance, Junction to Ambient (Note 5) R θJA 139 °C/W Thermal Resistance, Junction to case (Note 5) R θJC 32 °C/W Operating and Storage Temperature Range T T STG -55 to +150 °C

Electrical Characteristics

(@T A = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS -20 ⎯ ⎯ V V GS = 0V, I D = -250μA Zero Gate Voltage Drain Current I DSS ⎯ ⎯ -1 µA V DS = -20V, V GS = 0V Gate-Source Leakage I GSS ⎯ ⎯ ±10 µA V GS = ±8.0V, V DS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V GS th DS = V GS , I D = -250μA Static Drain-Source On-Resistance R DS (ON) ⎯ 31 42.5 mΩ V GS = -4.5V, I D = -4.0A ⎯ 40 53 V GS = -2.5V, I D = -3.5A ⎯ 51 71 V GS = -1.8V, I D = -2.0A Forward Transfer Admittance |Y fs | 3 ⎯ S V DS = -5V, I D = -4A DYNAMIC CHARACTERISTICS Input Capacitance C iss ⎯ 294 ⎯ pF V DS = -10V, V GS = 0V f = 1.0MHz Output Capacitance C oss ⎯ 104 ⎯ pF Reverse Transfer Capacitance C rss ⎯ 25 ⎯ pF Gate Resistnace R g 250 Ω V DS = 0V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Total Gate Charge Q g ⎯ 9.1 ⎯ nC V GS = -4.5V, V DS = -10V I D = -4A Gate-Source Charge Q g s ⎯ 1.5 ⎯ nC Gate-Drain Charge Q g d ⎯ 1.7 ⎯ nC Turn-On Delay Time t D on ⎯ 71 ⎯ ns V DS = -10V, V GS = -4.5V, R D = 2.5Ω, R G = 3.0Ω, I D = -1A Turn-On Rise Time t r ⎯ 117 ⎯ ns Turn-Off Delay Time t D off ⎯ 795 ⎯ ns Turn-Off Fall Time t f ⎯ 393 ⎯ ns Notes: 3. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. 4. Short duration pulse test used to minimize self-heating effect. DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET 2 of 2sales@zpsemi.com www.zpsemi.com