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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

  • Low On-Resistance
  • 25m Ω @ V GS = 4.5V
  • 29m Ω @ V GS = 2.5V
  • 37m Ω @ V GS = 1.8V
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Lead Free By Design/RoHS Compliant (Note 1)
  • "Green" Device (Note 2)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SOT-23
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020D
  • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Terminals Connections: See Diagram Below
  • Weight: 0.008 grams (approximate) Maximum Ratings A = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V Continuous Drain Current (Note 3) Steady State T A = 25°C T A = 70°C I D 4.2 3.2 A Pulsed Drain Current (Note 4) I DM 30 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) P D 0.78 W Thermal Resistance, Junction to Ambient @T A = 25°C R θJA 162 °C/W Operating and Storage Temperature Range T T STG -55 to +150 °C Notes: 1. No purposefully added lead. 2. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s. 3. Repetitive rating, pulse width limited by junction temperature. TOP VIEW Internal Schematic TOP VIEW D G S Source Gate Drain 1 of 2sales@zpsemi.com www.zpsemi.com

Electrical Characteristics

A = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV DSS 20 ⎯ ⎯ V V GS = 0V, I D = 250μA Zero Gate Voltage Drain Current T J = 25°C I DSS ⎯ ⎯ 1.0 μA V DS = 20V, V GS = 0V Gate-Source Leakage I GSS ⎯ ⎯ ±100 nA V GS = ±8V, V DS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V GS th 0.5 ⎯ 0.9 V V DS = V GS , I D = 250μA Static Drain-Source On-Resistance R DS (ON) 19 25 mΩ V GS = 4.5V, I D = 8.2A 22 29 V GS = 2.5V, I D = 3.3A 28 37 V GS = 1.8V, I D = 2.0A Forward Transfer Admittance |Y fs | ⎯ 7 ⎯ S V DS = 10V, I D = 4A DYNAMIC CHARACTERISTICS Input Capacitance C iss ⎯ 829.9 ⎯ pF V DS = 10V, V GS = 0V f = 1.0MHz Output Capacitance C oss ⎯ 85.3 ⎯ pF Reverse Transfer Capacitance C rss ⎯ 81.2 ⎯ pF Total Gate Charge Q g ⎯ 9.6 ⎯ nC V GS = 4.5V, V DS = 10V, I D = 8.2A Gate-Source Charge Q g s ⎯ 1.5 ⎯ nC Gate-Drain Charge Q g d ⎯ 3.5 ⎯ nC Turn-On Delay Time t D on ⎯ 8.1 ⎯ ns V DD = 10V, V GS = 4.5V, R L = 10Ω, R G = 6Ω, I D = 1A Turn-On Rise Time t r ⎯ 8.3 ⎯ ns Turn-Off Delay Time t D off ⎯ 40.1 ⎯ ns Turn-Off Fall Time t f ⎯ 9.6 ⎯ ns Notes: 4. Short duration pulse test used to minimize self-heating effect. DMG3414U N-CHANNEL ENHANCEMENT MODE MOSFET 2 of 2sales@zpsemi.com www.zpsemi.com