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P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS R DS(ON) I D T A = 25°C -30V 50mΩ @ V GS = -10V -4.0A 72mΩ @ V GS = -4.5V -3.3A Description and Applications This new generation MOSFET has been designed to minimize the on- state resistance (R DS(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

  • Load Switch
  • DC-DC Converters
  • Power management functions Features and Benefits
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Lead-Free Finish; RoHS compliant (Note 1)
  • Halogen and Antimony Free. “Green” Device (Note 2)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SC59
  • Case Material – Molded Plasti c. UL Flammability Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208
  • Terminal Connections: See Diagram
  • Weight: 0.014 grams (approximate)

Ordering Information

(Note 3) Part Number Case Packaging DMG3407SSN-7 SC59 3000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free Marking Information Date Code Key Year 2010 2011 2012 2013 2014 2015 2016 Code X Y Z A B C D Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SC59 Top View Pin Configuration Source Gate Drain Internal Schematic D G S G32 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) G32 YM 1 of 2sales@zpsemi.com www.zpsemi.com

A = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage V DSS -30 V Gate-Source Voltage V GSS ±20 V Continuous Drain Current (Note 5) V GS = -10V Steady State T A = 25°C T A = 70°C I D -4.0 -3.2 A t<10s T A = 25°C T A = 70°C I D -4.6 -3.6 A Continuous Drain Current (Note 5) V GS = -4.5V Steady State T A = 25°C T A = 70°C I D -3.3 -2.6 A t<10s T A = 25°C T A = 70°C I D -3.9 -3.1 A Pulsed Drain Current (10μs pulse, duty cycle = 1%) I DM -30 A Maximum Body Diode Forward Current (Note 5) I S -2.0 A Thermal Characteristics A = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 4) T A = 25°C P D 1.1 W T A = 70°C 0.7 Thermal Resistance, Junction to Ambient (Note 4) Steady state R θJA 166 °C/W t<10s 118 Total Power Dissipation (Note 5) T A = 25°C P D 1.8 W T A = 70°C 1.1 Thermal Resistance, Junction to Ambient (Note 5) Steady state R θJA °C/W t<10s 71 Thermal Resistance, Junction to Case (Note 5) R θJC Operating and Storage Temperature Range T T STG -55 to +150 °C

Electrical Characteristics

@ T A = 25°C unless otherwise stated Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS -30 - - V V GS = 0V, I D = -250μA Zero Gate Voltage Drain Current T J = 25°C I DSS - - -1 μA V DS = -30V, V GS = 0V Gate-Source Leakage I GSS - - ±100 nA V GS = ±20V, V DS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V GS th -1.0 -1.5 -2.1 V V DS = V GS , I D = -250μA Static Drain-Source On-Resistance R DS (ON) - 39 50 mΩ V GS = -10V, I D = -4.1A - 56 72 V GS = -4.5V, I D = -3.0A Forward Transfer Admittance |Y fs | - 8.2 - S V DS = -5V, I D = -4A Diode Forward Voltage V SD - -0.75 -1.1 V V GS = 0V, I S = -1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C iss 466 582 700 pF V DS = -15V, V GS = 0V, f = 1.0MHz Output Capacitance C oss 80 114 148 Reverse Transfer Capacitance C rss 47 76 105 Gate Resistance R g 2 5 8 Ω V DS = 0V, V GS = 0V, f = 1MHz Total Gate Charge Q g 10.6 13.3 16 nC V GS = -10V, V DS = -15V, I D = -4A Total Gate Charge Q g 5.2 6.5 8.5 V GS = -4.5V, V DS = -15V,I D = -4A Gate-Source Charge Q g s 1.3 1.7 2 Gate-Drain Charge Q g d 1.1 1.9 2.7 Turn-On Delay Time t D on - 6.0 - ns V GS = -10V, V DS = -15V, R L = 3.6Ω, R G = 3Ω Turn-On Rise Time t r - 12.9 - Turn-Off Delay Time t D off - 35.4 - Turn-Off Fall Time t f - 30.7 - Reverse Recovery Time t r r 6.8 8.5 10.2 ns I F = 4A, di/dt = 100A/μs Reverse Recovery Charge Q r r 5.5 7.0 8.5 nC Notes: 2. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation P D is based on t<10s R θJA 3. Device mounted on 1” x 1” FR-4 PCB with high co verage 2 oz. Copper, single sided. The power dissipation P D is based on t<10s R θJA 4. Short duration pulse test used to minimize self-heating effect. 5. Guaranteed by design. Not subject to production testing. DMG3407SSN P-CHANNEL ENHANCEMENT MODE MOSFET 2 of 2sales@zpsemi.com www.zpsemi.com