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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

  • Low Input Capacitance
  • Low On-Resistance
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SC59
  • Case Material: Molded Plastic “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections: See Diagram
  • Weight: 0.008 grams (approximate)

Ordering Information

(Note 4) Part Number Case Packaging DMG3401LSN-7 SC59 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Date Code Key Year 2011 2012 2013 2014 2015 2016 2017 Code Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View E q uivalent Circuit To p View D G S G34 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) Source Gate Drain SC59 G34 YM 1 of 2sales@zpsemi.com www.zpsemi.com

5.Short duration pulse test used to minimize self-heating effect. NEW PRODUCT Maximum Ratings (@T A = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V DSS -30 V Gate-Source Voltage V GSS ±12 V Continuous Drain Current (Note 5) V GS = -10V Steady State T A = +25°C T A = +70°C I D -3.0 -2.3 A Continuous Drain Current (Note 6) V GS = -10V Steady State T A = +25°C T A = +70°C I D -3.7 -2.9 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) I DM -30 A Maximum Body Diode Continuous Current (Note 6) I S -1.5 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) P D 0.8 W (Note 6) 1.2 Thermal Resistance, Junction to Ambient (Note 5) R θJA 159 °C/W (Note 6) 105 Thermal Resistance, Junction to Case (Note 6) R θJC Operating and Storage Temperature Range T T STG -55 to +150 °C

Electrical Characteristics

(@T A = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV DSS -30 - - V V GS = 0V, I D = -250μA Zero Gate Voltage Drain Current T J = 25°C I DSS - - -1.0 µA V DS =-30V, V GS = 0V Gate-Body Leakage I GSS - - ±100 nA V GS = ±12V, V DS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V GS th -0.5 -1.0 -1.3 V V DS = V GS , I D = -250μA Static Drain-Source On-Resistance R DS (ON) - 41 50 mΩ V GS = -10V, I D = -4A - 47 60 V GS = -4.5V, I D = -3.5A - 60 85 V GS = -2.5V, I D = -2.5A Forward Transfer Admittance |Y fs | - 12 - S V DS = -5V, I D = -4A Diode Forward Voltage V SD - -0.8 -1.0 V V GS = 0V, I S = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C iss - 1326 - pF V DS = -15V, V GS = 0V, f = 1.0MHz Output Capacitance C oss - 103 - Reverse Transfer Capacitance C rss - 71 - Gate Resistance R g - 7.3 - Ω V DS = 0V, V GS = 0V, f = 1.0MHz Total Gate Charge (V GS = -4.5V) Q g - 11.6 - nC V DD = -15V, I D = -4A Total Gate Charge (V GS = -10V) Q g - 25.1 - Gate-Source Charge Q g s - 2 - Gate-Drain Charge Q g d - 1.7 - Turn-On Delay Time t D on - 8 - nS V DS = -15V, V GS = -10V, R GEN = 6Ω, R L = 3.75Ω Turn-On Rise Time t r - 13 - Turn-Off Delay Time t D off - 71 - Turn-Off Fall Time t f - 38 - Notes: 3. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 4. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 6. Guaranteed by design. Not subject to production testing DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET 2 of 2sales@zpsemi.com www.zpsemi.com