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Technical content

P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS R DS(ON) max I D max T A = 25°C -30V 90mΩ @ V GS = -10V -3.8A 134mΩ @ V GS = -4.5V -3.1A Description and Applications This MOSFET has been designed to minimize the on-state resistance DS(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Load Switch for Portable Devices Features and Benefits
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Lead Free By Design/RoHS Compliant (Note 1)
  • "Green" Device (Note 2)
  • Qualified to AEC-Q101 standards for High Reliability Mechanical Data
  • Case: SOT-23
  • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections Indicator: See diagram
  • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.08 grams (approximate)

Ordering Information

(Note 3) Part Number Case Packaging DMG2307L-7 SOT-23 3000Tape & Reel Notes: 1. No purposefully added lead. Marking Information 1 of 2sales@zpsemi.com www.zpsemi.com

A = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage V DSS -30 V Gate-Source Voltage V GSS ±20 V Continuous Drain Current (Note 4) V GS = -10V Steady State T A = 25°C T A = 70°C I D -2.5 -2.0 A Continuous Drain Current (Note 5) V GS = -10V Steady State T A = 25°C T A = 70°C I D -3.8 -3.0 A Continuous Drain Current (Note 5) V GS = -10V t≦10sec T A = 25°C T A = 70°C I D -4.6 -3.6 A Continuous Drain Current (Note 5) V GS = -4.5V Steady State T A = 25°C T A = 70°C I D -3.1 -2.5 A Pulsed Drain Current (Note 5) I DM -20 A Thermal Characteristics A = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 4) P D 0.76 W Thermal Resistance, Junction to Ambient (Note 4) R θJA 159 °C/W Total Power Dissipation (Note 5) P D 1.36 W Thermal Resistance, Junction to Ambient (Note 5) R θJA 94 °C/W Total Power Dissipation (Note 5) t ≦ 10sec P D 1.9 W Thermal Resistance, Junction to Ambient (Note 5) t ≦ 10sec R θJA 65.8 °C/W Operating and Storage Temperature Range T T STG -55 to +150 °C

Electrical Characteristics

A = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS -30 - - V V GS = 0V, I D = -250μA Zero Gate Voltage Drain Current @T c = 25°C I DSS - - -1.0 μA V DS = -30V, V GS = 0V Gate-Source Leakage I GSS - - ±100 nA V GS = ±20V, V DS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V GS th -1.0 - -3.0 V V DS = V GS , I D = -250μA Static Drain-Source On-Resistance R DS (ON) - 70 90 mΩ V GS = -10V, I D = -2.5A - 105 134 V GS = -4.5V, I D = -2.5A Forward Transfer Admittance |Y fs | - 4.8 - S V DS = -10V, I D = -2.5A Diode Forward Voltage (Note 6) V SD - -0.75 -1.0 V V GS = 0V, I S = -1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C iss - 371.3 - pF V DS = -15V, V GS = 0V, f = 1.0MHz Output Capacitance C oss - 51.3 - pF Reverse Transfer Capacitance C rss - 45.9 - pF Gate Resistance R g - 17 - Ω V DS = 0V, V GS = 0V,f = 1.0MHz Total Gate Charge (V GS = -4.5V) Q g - 4.0 - nC V GS = -10V, V DS = -15V, I D = -3A Total Gate Charge (V GS = -10V) Q g 8.2 - nC Gate-Source Charge Q g s - 0.9 - nC Gate-Drain Charge Q g d - 1.2 - nC Turn-On Delay Time t D on - 4.8 - ns V DS = -15V, V GS = -10V, R L = 15Ω, R G = 6Ω, I D = -1A Turn-On Rise Time t r - 7.3 - ns Turn-Off Delay Time t D off - 22.4 - ns Turn-Off Fall Time t f - 13.4 - ns Notes: 2. Device mounted on FR-4 PCB, with minimum recommended pad layout. 3. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 4. Short duration pulse test used to minimize self-heating effect. 5. Guaranteed by design. Not subject to product testing. DMG2307L P-CHANNEL ENHANCEMENT MODE MOSFET 2 of 2sales@zpsemi.com www.zpsemi.com