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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Lead Free By Design/RoHS Compliant (Note 1)
- "Green" Device (Note 2)
- Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
- Case: SOT-23
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020D
- Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
- Terminals Connections: See Diagram Below
- Weight: 0.008 grams (approximate) Maximum Ratings A = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V Continuous Drain Current (Note 3) Steady State T A = 25°C T A = 70°C I D 4.2 3.4 A Pulsed Drain Current (Note 4) I DM 27 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T A = 25°C T A = 70°C P D 0.8 0.5 W Thermal Resistance, Junction to Ambient @T A = 25°C R θJA 156 °C/W Operating and Storage Temperature Range T T STG -55 to +150 °C Notes: 1. No purposefully added lead. 2. Device mounted on FR-4 PCB, with minimum recommended pad layout. 3. Repetitive rating, pulse width limited by junction temperature. TOP VIEW Internal Schematic TOP VIEW D G S Source Gate Drain 1 of 2sales@zpsemi.com www.zpsemi.com
Electrical Characteristics
A = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV DSS 20 - - V V GS = 0V, I D = 10μA Zero Gate Voltage Drain Current TJ = 25°C I DSS - - 1.0 μA V DS = 20V, V GS = 0V Gate-Source Leakage I GSS - - ±100 nA V GS = ±8V, V DS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V GS th 0.4 - 1.0 V V DS = V GS , I D = 50μA Static Drain-Source On-Resistance R DS (ON) - - 90 120 mΩ V GS = 4.5V, I D = 3.6A V GS = 2.5V, I D = 3.1A Forward Transfer Admittance |Y fs | - 13 - S V DS = 5V, I D = 3.6A Diode Forward Voltage V SD - 0.75 1.0 V V GS = 0V, I S = 1A DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance C iss - 594.3 - pF V DS = 10V, V GS = 0V, f = 1.0MHz Output Capacitance C oss - 64.5 - pF Reverse Transfer Capacitance C rss - 57.7 - pF Gate Resistance R g - 1.5 - Ω V DS = 0V, V GS = 0V, f = 1MHz Total Gate Charge Q g - 7.0 - nC V GS = 4.5V, V DS = 10V, I D = 3.6A Gate-Source Charge Q g s - 0.9 - nC Gate-Drain Charge Q g d - 1.4 - nC Turn-On Delay Time t D on - 7.4 - ns V DD = 10V, V GS = 4.5V, R L = 2.78Ω, R G = 1.0Ω Turn-On Rise Time t r - 9.8 - ns Turn-Off Delay Time t D off - 28.1 - ns Turn-Off Fall Time t f - 6.7 - ns Notes: 4. Short duration pulse test used to minimize self-heating effect. 5. Guaranteed by design. Not subject to production testing. DMG2302U N-CHANNEL ENHANCEMENT MODE MOSFET 2 of 2sales@zpsemi.com www.zpsemi.com