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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 standards for High Reliability Mechanical Data
  • Case: SOT23
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Terminals Connections: See Diagram Below
  • Weight: 0.008 grams (approximate)

Ordering Information

(Note 4) Part Number Case Packaging DMG2301U-7 SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Date Code Key Year 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 Code W X Y Z A B C D E F Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View Internal Schematic Top View Pin Configuration D G S G21 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) G21 YM SOT23 Source Gate Drain 1 of 2sales@zpsemi.com www.zpsemi.com

(@T A = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V DSS -20 V Gate-Source Voltage V GSS ±8 V Continuous Drain Current (Note 5) V GS = -4.5V Steady State T A = +25°C T A = +70°C I D -2.7 -2.1 A Continuous Drain Current (Note 5) V GS = -2.5V Steady State T A = +25°C T A = +70°C I D -2.1 -1.7 A Pulsed Drain Current (Note 6) I DM -27 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P D 0.8 W Thermal Resistance, Junction to Ambient @T A = +25°C (Note 5) R θJA 157 °C/W Operating and Storage Temperature Range T T STG -55 to +150 °C

Electrical Characteristics

(@T A = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV DSS -20 ⎯ ⎯ V V GS = 0V, I D = -250μA Zero Gate Voltage Drain Current T J = +25°C I DSS ⎯ ⎯ -1.0 μA V DS = -16V, V GS = 0V Gate-Source Leakage I GSS ⎯ ⎯ ±100 nA V GS = ±8V, V DS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V GS th -0.45 ⎯ -1.0 V V DS = V GS , I D = -250μA Static Drain-Source On-Resistance R DS (ON) ⎯ ⎯ 80 mΩ V GS = -4.5V, I D = -2.8A 110 V GS = -2.5V, I D = -2.0A Forward Transfer Admittance |Y fs | ⎯ 10 ⎯ S V DS = -5V, I D = -2.8A Diode Forward Voltage V SD ⎯ -0.75 -1.0 V V GS = 0V, I S = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C iss ⎯ 608 ⎯ pF V DS = -6V, V GS = 0V f = 1.0MHz Output Capacitance C oss ⎯ 82 ⎯ pF Reverse Transfer Capacitance C rss ⎯ 72 ⎯ pF Gate Resistance R G ⎯ 44.9 ⎯ Ω V GS = 0V, V DS = 0V, f = 1.0MHz Total Gate Charge Q g ⎯ 6.5 ⎯ nC V GS = -4.5V, V DS = -10V, I D = -3A Gate-Source Charge Q g s ⎯ 0.9 ⎯ nC Gate-Drain Charge Q g d ⎯ 1.5 ⎯ nC Turn-On Delay Time t D on ⎯ 12.5 40 ns V DS = -10V, V GS = -4.5V, R L = 10Ω, R G = 1.0Ω, I D = -1A Turn-On Rise Time t r ⎯ 10.3 30 ns Turn-Off Delay Time t D off ⎯ 46.5 140 ns Turn-Off Fall Time t f ⎯ 22.2 66 ns Notes: 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature.. 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET 2 of 2sales@zpsemi.com www.zpsemi.com