AOI518 AOSMD | Alldatasheet

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General Description Product Summary VDS I D (at V GS =10V) 54A R DS(ON) (at V GS =10V) < 8m Ω R DS(ON) (at V GS = 4.5V) < 12m Ω Application 100% UIS Tested 100% R g Tested Symbol VDS VGS V±20 Gate-Source Voltage Drain-Source Voltage 30 V Maximum Units Parameter Absolute Maximum Ratings T A =25° C unless otherwise noted 30V• Latest Trench Power MOSFET technology

  • Very Low RDS(on) at 10VGS
  • Low Gate Charge
  • High Current Capability
  • RoHS and Halogen-Free Compliant
  • DC/DC Converters in Computing
  • Isolated DC/DC Converters in Telecom and Industrial G D S G GD D S S D Top View Bottom View TO-251A IPAK TO252 DPAK TopView Bottom View G GD DS S D VGS IDM IAS EAS VDS Spike VSPIKE TJ, T STG Symbol t ≤ 10s Steady-State Steady-State R θJC 100ns 36 V Maximum Junction-to-Ambient A ° C/W R θJA Units Junction and Storage Temperature Range -55 to 175 ° C Thermal Characteristics Parameter Typ V±20 Gate-Source Voltage Max TA=70° C ID T C =25° C TC =100° C

96 Pulsed Drain Current C

G mJ Avalanche Current C Continuous Drain Current A25 Avalanche energy L=0.1mH C A TA=25° C IDSM A W Power Dissipation A PDSM WTA=70° C 1.6 TA=25° C TC =25° C 2.5

25 TC =100° C Power Dissipation B PD

Maximum Junction-to-Case ° C/W ° C/W Maximum Junction-to-Ambient A D 2.5 Rev 1: Mar 2012 www.aosmd.com Page 1 of 6

VDS =30V, V GS =0V 1 TJ=55° C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 1.8 2.2 2.6 V 6 8 TJ=125° C 7.5 10 8.5 12 m Ω gFS 91 S VSD 0.7 1 V IS 54 A C iss 951 pF C oss 373 pF C rss 62 pF R g 0.7 1.5 2.3 Ω Q g(10V) 15.7 22.5 nC Q g(4.5V) 7.5 10.5 nC Q gs 2.8 nC Q gd 3.2 nC tD(on) 6.25 ns tr 2.5 ns t 18.5 ns Reverse Transfer Capacitance VGS =0V, V DS =15V, f=1MHz VDS =V GS ，ID =250 µA Turn-On Rise Time Turn-Off DelayTime VGS =10V, V DS =15V, R L=0.75 Ω , R =3 Ω Turn-On DelayTime Gate resistance VGS =0V, V DS =0V, f=1MHz Total Gate Charge Gate Source Charge Gate Drain Charge Total Gate Charge SWITCHING PARAMETERS V GS =10V, V DS =15V, I D =20A Electrical Characteristics (T J=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µAZero Gate Voltage Drain Current Drain-Source Breakdown Voltage ID =250 µA, V GS =0V VDS =0V, V GS = ±20V Maximum Body-Diode Continuous Current G Input Capacitance Output Capacitance Forward Transconductance I S=1A,V GS =0V VDS =5V, I D =20A DYNAMIC PARAMETERS VGS =4.5V, I D =20A R DS(ON) Static Drain-Source On-Resistance Diode Forward Voltage m Ω V GS =10V, I D =20A Gate-Body leakage current tD(off) 18.5 ns tf 4 ns trr 10.2 ns Q rr 13.6 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR TH E CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE N OT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/ µs Turn-Off DelayTime R GEN =3 Ω Turn-Off Fall Time IF=20A, dI/dt=500A/ µs A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 °C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175 °C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX) =175 °C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX) =175 °C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175 °C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 °C. Rev 1: Mar 2012 www.aosmd.com Page 2 of 6

Gate Charge Test Circuit & Waveform VDC DUT Vdd Vgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms t t rd(on) ton td(off) tf toff Id L Vds BV Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds DSS E = 1/2 LI AR AR Vdd Vgs Vgs Rg DUT VDC Vgs Id Vgs I Ig Vgs VDC DUT L Vgs Vds Isd Isd Diode Recovery Test Circuit & Waveforms Vds - Vds + IF AR dI/dt IRM rr Vdd Vdd Q = - Idt trr Rev 1: Mar 2012 www.aosmd.com Page 6 of 6