AOD484 AOSMD | Alldatasheet
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VDS (V) = 30V ID = 25 A (VGS = 10V) RDS(ON) < 15 mΩ (VGS = 10V) RDS(ON) < 23 mΩ (VGS = 4.5V) UIS Tested! General Description The AOD484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD484 is Pb-free (meets ROHS & Sony 259 specifications). AOD484L is a Green Product ordering option. AOD484 and AOD484L are electrically identical. G D S G D S TO-252 D-PAK Top View Drain Connected to Tab Alpha & Omega Semiconductor, Ltd.
TJ=55°C 5 IGSS ±100 nA VGS(th) 1 1.5 2.5 V ID(ON) 80 A 12.1 15 TJ=125°C 19 18.5 23 mΩ gFS 26 S VSD 0.71 1 V IS 21 A Ciss 938 1220 pF Coss 142 pF Crss 99 pF Rg 1.2 1.8 Ω Qg(10V) 17.5 21 nC Qg(4.5V) 8.4 nC Qgs 3n C Qgd 4.1 nC tD(on) 5n s tr 12 ns tD(off) 19 ns tf 6n s trr 19 21 ns Qrr 10 12 nC 2.5 1.6 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=250uA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=20A Reverse Transfer Capacitance IF=20A, dI/dt=100A/μs VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS μA Gate Threshold Voltage V DS=VGS, ID=250μA VDS=24V, VGS=0V VDS=0V, VGS=±20V Zero Gate Voltage Drain Current Gate-Body leakage current RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage mΩ VGS=4.5V, ID=15A IS=1A, VGS=0V VDS=5V, ID=20A Gate resistance V GS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=15V, ID=20A Gate Source Charge Gate Drain Charge Total Gate Charge Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/μs Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 1: Aug. 2006 Alpha & Omega Semiconductor, Ltd.